International Rectifier HEXFET N-Channel MOSFET, 11.8 A, 30 V Enhancement, 8-Pin SOIC IRF7811AVTRPBF
- RS Stock No.:
- 230-406
- Mfr. Part No.:
- IRF7811AVTRPBF
- Brand:
- International Rectifier
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 230-406
- Mfr. Part No.:
- IRF7811AVTRPBF
- Brand:
- International Rectifier
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | International Rectifier | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 11.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 3W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4mm | |
| Length | 5mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand International Rectifier | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 11.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 3W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4mm | ||
Length 5mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
- COO (Country of Origin):
- TH
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- International Rectifier HEXFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC IRF7468PBF
- International Rectifier IRLML2502 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- International Rectifier IRLML2502 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 IRLML2502TRPBF
- Infineon HEXFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC
