Infineon HEXFET Dual Silicon N-Channel MOSFET, 140 A, 75 V, 3-Pin TO-220AB IRF3808PBF

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Subtotal (1 tube of 1000 units)*

£948.00

(exc. VAT)

£1,138.00

(inc. VAT)

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Units
Per unit
Per Tube*
1000 - 1000£0.948£948.00
2000 +£0.90£900.00

*price indicative

RS Stock No.:
262-6728
Mfr. Part No.:
IRF3808PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

140 A

Maximum Drain Source Voltage

75 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

Silicon

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. This design has additional features such as 175°C operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating.

Repetitive avalanche allowed up to Tjmax

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