Infineon HEXFET N-Channel MOSFET, 75 A, 86 A, 55 V, 3-Pin TO-220AB AUIRL3705Z
- RS Stock No.:
- 145-9222
- Mfr. Part No.:
- AUIRL3705Z
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 145-9222
- Mfr. Part No.:
- AUIRL3705Z
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 75 A, 86 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 8 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 130 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
Length | 10.67mm | |
Transistor Material | Si | |
Width | 4.83mm | |
Number of Elements per Chip | 1 | |
Height | 9.02mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A, 86 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Length 10.67mm | ||
Transistor Material Si | ||
Width 4.83mm | ||
Number of Elements per Chip 1 | ||
Height 9.02mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 75A/86A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - AUIRL3705Z
This MOSFET is tailored for automotive applications, ensuring solid performance in challenging environments. It incorporates advanced processing techniques that enhance efficiency and lower on-resistance, making it crucial for high-current systems. The comprehensive safety and thermal management features reinforce its importance in modern electronic applications.
Features & Benefits
• Maximum continuous drain current of 86A for robust usage
• Low on-resistance of up to 8mΩ for improved efficiency
• Fast switching capability, optimising overall system performance
• Reliable operation at high temperatures, up to 175°C
• Complies with automotive qualifications per AEC-Q101 standards
• High power dissipation capacity of up to 130W
• Low on-resistance of up to 8mΩ for improved efficiency
• Fast switching capability, optimising overall system performance
• Reliable operation at high temperatures, up to 175°C
• Complies with automotive qualifications per AEC-Q101 standards
• High power dissipation capacity of up to 130W
Applications
• Suitable for automotive power management systems
• Utilised in electric vehicle powertrains
• Applicable in DC-DC converters within automotive electronics
• Employed in battery management systems
• Effective for motor control in machinery
• Utilised in electric vehicle powertrains
• Applicable in DC-DC converters within automotive electronics
• Employed in battery management systems
• Effective for motor control in machinery
What is the maximum gate-source voltage this component can handle?
It can manage a maximum gate-source voltage of ±16V, ensuring compatibility with various control circuits.
How does the high current capability benefit my application?
The continuous drain current rating of 86A enables stable operations in power-intensive applications, enhancing efficiency and reducing thermal stress.
Can this component operate efficiently at elevated temperatures?
Yes, it is designed for effective operation at temperatures up to 175°C, making it suitable for automotive environments.
Is there a risk of damage if the recommended operating conditions are exceeded?
Yes, exceeding the specified absolute maximum ratings may result in permanent device damage. It is essential to operate within the recommended limits for reliability.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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