Infineon HEXFET N-Channel MOSFET, 75 A, 86 A, 55 V, 3-Pin TO-220AB AUIRL3705Z

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RS Stock No.:
145-9222
Mfr. Part No.:
AUIRL3705Z
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

75 A, 86 A

Maximum Drain Source Voltage

55 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

40 nC @ 10 V

Length

10.67mm

Transistor Material

Si

Width

4.83mm

Number of Elements per Chip

1

Height

9.02mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

Automotive N-Channel Power MOSFET, Infineon


Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 75A/86A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - AUIRL3705Z


This MOSFET is tailored for automotive applications, ensuring solid performance in challenging environments. It incorporates advanced processing techniques that enhance efficiency and lower on-resistance, making it crucial for high-current systems. The comprehensive safety and thermal management features reinforce its importance in modern electronic applications.

Features & Benefits


• Maximum continuous drain current of 86A for robust usage
• Low on-resistance of up to 8mΩ for improved efficiency
• Fast switching capability, optimising overall system performance
• Reliable operation at high temperatures, up to 175°C
• Complies with automotive qualifications per AEC-Q101 standards
• High power dissipation capacity of up to 130W

Applications


• Suitable for automotive power management systems
• Utilised in electric vehicle powertrains
• Applicable in DC-DC converters within automotive electronics
• Employed in battery management systems
• Effective for motor control in machinery

What is the maximum gate-source voltage this component can handle?


It can manage a maximum gate-source voltage of ±16V, ensuring compatibility with various control circuits.

How does the high current capability benefit my application?


The continuous drain current rating of 86A enables stable operations in power-intensive applications, enhancing efficiency and reducing thermal stress.

Can this component operate efficiently at elevated temperatures?


Yes, it is designed for effective operation at temperatures up to 175°C, making it suitable for automotive environments.

Is there a risk of damage if the recommended operating conditions are exceeded?


Yes, exceeding the specified absolute maximum ratings may result in permanent device damage. It is essential to operate within the recommended limits for reliability.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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