Infineon HEXFET N-Channel MOSFET, 210 A, 30 V, 3-Pin TO-247AC IRFP3703PBF

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RS Stock No.:
543-1156
Mfr. Part No.:
IRFP3703PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

210 A

Maximum Drain Source Voltage

30 V

Package Type

TO-247AC

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.8 mO

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

209 nC @ 10 V

Length

15.9mm

Width

5.3mm

Transistor Material

Si

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Height

20.3mm

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 210A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRFP3703PBF


This high current MOSFET is essential for applications that require efficient power management. Its HEXFET technology ensures it meets performance criteria across various industrial and electronic uses. As an N-channel device, it provides substantial current handling and effective voltage control in robust and efficient semiconductor systems.

Features & Benefits


• Handles up to 210A continuous drain current
• Low on-resistance of 2.8mΩ minimises power losses
• Optimised for high-speed operations with quick turn-on and turn-off
• Single transistor configuration simplifies circuit design

Applications


• Used in power management systems for efficient switching
• Applied in synchronous rectification to enhance energy conversion
• Integrated in industrial automation equipment for dependable operation
• Utilised in power supplies requiring high efficiency and minimal heat generation
• Suitable for automotive needing durable components

What type of applications is this device best suited for?


This device excels in power management, particularly in synchronous rectification and industrial automation, owing to its high current handling and voltage capabilities.

How does the high continuous drain current affect performance?


The ability to manage 210A continuously allows for efficient energy transfer while reducing heat generation, thereby improving overall performance and reliability.

What are the implications of the low on-resistance?


A low on-resistance of 2.8mΩ greatly diminishes power losses during operation, enhancing efficiency and aiding in thermal management under high-load conditions.

What operating temperature range can this device handle?


It functions effectively over a wide temperature span from -55°C to +175°C, making it suitable for various demanding environments.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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