Infineon Single HEXFET 1 Type N-Channel MOSFET, 210 A, 30 V Enhancement, 3-Pin TO-247AC IRFP3703PBF

RS Stock No.:: 913-3840
Mfr. Part No.:: IRFP3703PBF
Brand:: Infineon

Infineon Single HEXFET 1 Type N-Channel MOSFET, 210 A, 30 V Enhancement, 3-Pin TO-247AC IRFP3703PBF

Currently unavailable

We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.

RS Stock No.:: 913-3840
Mfr. Part No.:: IRFP3703PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	210A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	3.8W
	Maximum Operating Temperature	175°C
	Transistor Configuration	Single
	Length	15.9mm
	Height	20.3mm
	Width	5.3 mm
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 210A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 3.8W
	Maximum Operating Temperature 175°C
	Transistor Configuration Single
	Length 15.9mm
	Height 20.3mm
	Width 5.3 mm
	Number of Elements per Chip 1

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 210A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRFP3703PBF

This high current MOSFET is essential for applications that require efficient power management. Its HEXFET technology ensures it meets performance criteria across various industrial and electronic uses. As an N-channel device, it provides substantial current handling and effective voltage control in robust and efficient semiconductor systems.

Features & Benefits

• Handles up to 210A continuous drain current

• Low on-resistance of 2.8mΩ minimises power losses

• Optimised for high-speed operations with quick turn-on and turn-off

• Single transistor configuration simplifies circuit design

Applications

• Used in power management systems for efficient switching

• Applied in synchronous rectification to enhance energy conversion

• Integrated in industrial automation equipment for dependable operation

• Utilised in power supplies requiring high efficiency and minimal heat generation

• Suitable for automotive needing durable components

What type of applications is this device best suited for?

This device excels in power management, particularly in synchronous rectification and industrial automation, owing to its high current handling and voltage capabilities.

How does the high continuous drain current affect performance?

The ability to manage 210A continuously allows for efficient energy transfer while reducing heat generation, thereby improving overall performance and reliability.

What are the implications of the low on-resistance?

A low on-resistance of 2.8mΩ greatly diminishes power losses during operation, enhancing efficiency and aiding in thermal management under high-load conditions.

What operating temperature range can this device handle?

It functions effectively over a wide temperature span from -55°C to +175°C, making it suitable for various demanding environments.

How does the MOSFET’s configuration improve circuit design?

The single transistor configuration streamlines circuit layouts, reducing the number of required components while ensuring dependable operation in high-speed applications.