N-Channel MOSFET, 210 A, 30 V, 3-Pin TO-247AC Infineon IRFP3703PBF

RS Stock No.:: 913-3840
Mfr. Part No.:: IRFP3703PBF
Brand:: Infineon

N-Channel MOSFET, 210 A, 30 V, 3-Pin TO-247AC Infineon IRFP3703PBF

Subtotal (1 tube of 25 units)**

£29.00

(exc. VAT)

£34.75

(inc. VAT)

25 In stock - FREE next working day delivery available*

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Units	Per unit	Per Tube**
25 +	£1.16	£29.00

**price indicative

RS Stock No.:: 913-3840
Mfr. Part No.:: IRFP3703PBF
Brand:: Infineon

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 210A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRFP3703PBF

This high current MOSFET is essential for applications that require efficient power management. Its HEXFET technology ensures it meets performance criteria across various industrial and electronic uses. As an N-channel device, it provides substantial current handling and effective voltage control in robust and efficient semiconductor systems.

Features & Benefits

• Handles up to 210A continuous drain current
• Low on-resistance of 2.8mΩ minimises power losses
• Optimised for high-speed operations with quick turn-on and turn-off
• Single transistor configuration simplifies circuit design

Applications

• Used in power management systems for efficient switching
• Applied in synchronous rectification to enhance energy conversion
• Integrated in industrial automation equipment for dependable operation
• Utilised in power supplies requiring high efficiency and minimal heat generation
• Suitable for automotive needing durable components

What type of applications is this device best suited for?

This device excels in power management, particularly in synchronous rectification and industrial automation, owing to its high current handling and voltage capabilities.

How does the high continuous drain current affect performance?

The ability to manage 210A continuously allows for efficient energy transfer while reducing heat generation, thereby improving overall performance and reliability.

What are the implications of the low on-resistance?

A low on-resistance of 2.8mΩ greatly diminishes power losses during operation, enhancing efficiency and aiding in thermal management under high-load conditions.

What operating temperature range can this device handle?

It functions effectively over a wide temperature span from -55°C to +175°C, making it suitable for various demanding environments.

How does the MOSFET’s configuration improve circuit design?

The single transistor configuration streamlines circuit layouts, reducing the number of required components while ensuring dependable operation in high-speed applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	210 A
Maximum Drain Source Voltage	30 V
Package Type	TO-247AC
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2.8 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	3.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	15.9mm
Typical Gate Charge @ Vgs	209 nC @ 10 V
Maximum Operating Temperature	+175 °C
Width	5.3mm
Transistor Material	Si
Height	20.3mm
Minimum Operating Temperature	-55 °C