Infineon IRF1407PbF N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB IRF1407PBF
- RS Stock No.:
- 170-2243
- Mfr. Part No.:
- IRF1407PBF
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 170-2243
- Mfr. Part No.:
- IRF1407PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 130 A | |
Maximum Drain Source Voltage | 75 V | |
Package Type | TO-220AB | |
Series | IRF1407PbF | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 7.8 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 330 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | 20 V | |
Width | 4.83mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 160 nC @ 10 V | |
Length | 10.67mm | |
Maximum Operating Temperature | +175 °C | |
Height | 16.51mm | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 130 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type TO-220AB | ||
Series IRF1407PbF | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Width 4.83mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 160 nC @ 10 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Height 16.51mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
The Infineon IRF1407 is the 75V single N-channel HEXFET power MOSFET in a TO-220AB package. This stripe planar design of HEXFET power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Related links
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRFB4310PBF
- Infineon LogicFET N-Channel MOSFET 40 V, 3-Pin TO-220AB IRL1004PBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP4668PBF
- Infineon HEXFET N-Channel MOSFET 100 V TO-220 IRFS4310TRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V TO-220 IRFS7440TRLPBF
- Infineon HEXFET N-Channel MOSFET 40 V DPAK IRLR3114ZTRPBF
- Infineon OptiMOS™ 3 N-Channel MOSFET 150 V, 7-Pin D2PAK-7 IPB065N15N3GATMA1
- Infineon IMW65 SiC N-Channel MOSFET 650 V, 3-Pin PG-TO247-3 IMW65R010M2HXKSA1