Infineon IRF1407PbF N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB IRF1407PBF

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
170-2243
Mfr. Part No.:
IRF1407PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

75 V

Package Type

TO-220AB

Series

IRF1407PbF

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

4.83mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

160 nC @ 10 V

Length

10.67mm

Maximum Operating Temperature

+175 °C

Height

16.51mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

The Infineon IRF1407 is the 75V single N-channel HEXFET power MOSFET in a TO-220AB package. This stripe planar design of HEXFET power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard

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