Infineon Single IRF1407PbF 1 Type N-Channel MOSFET, 130 A, 75 V Enhancement, 3-Pin TO-220AB IRF1407PBF

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
170-2243
Mfr. Part No.:
IRF1407PBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

130A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-220AB

Series

IRF1407PbF

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Maximum Power Dissipation Pd

330W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Transistor Configuration

Single

Maximum Operating Temperature

175°C

Height

16.51mm

Length

10.67mm

Number of Elements per Chip

1

This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Benefits:

Low RDS(on)

Dynamic dv/dt Rating

Fast Switching

175°C Operating Temperature

Target Applications:

Consumer Full-Bridge

Full-Bridge

Push-Pull

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