Infineon HEXFET N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF
- RS Stock No.:
- 688-7027
- Mfr. Part No.:
- IRFP4668PBF
- Brand:
- Infineon
Subtotal (1 unit)*
£5.22
(exc. VAT)
£6.26
(inc. VAT)
FREE delivery for orders over £50.00
- 50 unit(s) ready to ship
- Plus 3 unit(s) ready to ship from another location
- Plus 1,609 unit(s) shipping from 09 October 2025
Units | Per unit |
---|---|
1 + | £5.22 |
*price indicative
- RS Stock No.:
- 688-7027
- Mfr. Part No.:
- IRFP4668PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 130 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | TO-247AC | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 10 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 520 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Typical Gate Charge @ Vgs | 161 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Length | 15.87mm | |
Width | 5.31mm | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 20.7mm | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 130 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 520 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 161 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 15.87mm | ||
Width 5.31mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 20.7mm | ||
Forward Diode Voltage 1.3V | ||
Infineon HEXFET Series MOSFET, 130A Maximum Continuous Drain Current, 200V Maximum Drain Source Voltage - IRFP4668PBF
Features & Benefits
• Low Rds(on) of 10mΩ minimises power loss
• High efficiency in synchronous rectification circuits
• Increased ruggedness under dynamic dV/dt conditions
• Fully characterised avalanche and thermal performance for reliability
Applications
• Suitable for uninterruptible power supply systems
• Ideal for hard-switched and high-frequency circuits
• Applicable in various automation and industrial power systems
What are the thermal ratings for safe operation?
How does the gate threshold voltage impact functionality?
Can this MOSFET handle high pulsed current loads?
Related links
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP4668PBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP260MPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP4227PBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP90N20DPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP250MPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP260NPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP250NPBF
- Infineon HEXFET N-Channel MOSFET 100 V TO-220 IRFS4310TRLPBF