Infineon HEXFET N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF

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Packaging Options:
RS Stock No.:
688-7027
Mfr. Part No.:
IRFP4668PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247AC

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

520 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

161 nC @ 10 V

Number of Elements per Chip

1

Transistor Material

Si

Length

15.87mm

Width

5.31mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

20.7mm

Forward Diode Voltage

1.3V

Infineon HEXFET Series MOSFET, 130A Maximum Continuous Drain Current, 200V Maximum Drain Source Voltage - IRFP4668PBF


This MOSFET is a high-performance N-channel device designed for efficient power management in various applications. Its dimensions are 15.87mm in length, 5.31mm in width, and 20.7mm in height, housed in a TO-247AC package. With robust specifications including a maximum continuous drain current of 130A and a maximum drain-source voltage of 200V, it is ideal for demanding electrical applications.

Features & Benefits


• Enhanced body diode for improved switching performance
• Low Rds(on) of 10mΩ minimises power loss
• High efficiency in synchronous rectification circuits
• Increased ruggedness under dynamic dV/dt conditions
• Fully characterised avalanche and thermal performance for reliability

Applications


• Used in high-speed power switching
• Suitable for uninterruptible power supply systems
• Ideal for hard-switched and high-frequency circuits
• Applicable in various automation and industrial power systems

What are the thermal ratings for safe operation?


The maximum power dissipation is rated at 520W at 25°C, and the junction temperature should not exceed 175°C to ensure safe operation.

How does the gate threshold voltage impact functionality?


The gate threshold voltage ranges from 3V to 5V, facilitating efficient control during switching operations, which is crucial for reliable performance in power applications.

Can this MOSFET handle high pulsed current loads?


Yes, it is rated for a pulsed drain current of up to 520A, making it suitable for heavy-duty applications requiring high current handling capabilities.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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