Infineon HEXFET N-Channel MOSFET, 130 A, 100 V, 3-Pin TO-220AB IRFB4310PBF

RS Stock No.:: 650-4744
Mfr. Part No.:: IRFB4310PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 130 A, 100 V, 3-Pin TO-220AB IRFB4310PBF

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181 unit(s) shipping from 08 October 2025

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Units	Per unit
1 - 9	£2.30
10 - 24	£2.07
25 - 49	£1.93
50 - 99	£1.79
100 +	£1.68

*price indicative

RS Stock No.:: 650-4744
Mfr. Part No.:: IRFB4310PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	130 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	300 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	170 nC @ 10 V
	Width	4.82mm
	Maximum Operating Temperature	+175 °C
	Length	10.66mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Forward Diode Voltage	1.3V
	Minimum Operating Temperature	-55 °C
	Height	9.02mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 130 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 300 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 170 nC @ 10 V
	Width 4.82mm
	Maximum Operating Temperature +175 °C
	Length 10.66mm
	Transistor Material Si
	Number of Elements per Chip 1
	Forward Diode Voltage 1.3V
	Minimum Operating Temperature -55 °C
	Height 9.02mm

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A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

Infineon HEXFET Series MOSFET, 130A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFB4310PBF

This robust and efficient power transistor is designed for high-performance applications in automation, electronics, and the electrical industry. The N-channel technology provides advantages in power management and switching capabilities. Its operating temperature range of -55°C to +175°C enhances its versatility and reliability across various environments.

Features & Benefits

• Supports up to 130A continuous drain current for substantial load demands
• Operates with a maximum voltage of 100 V for improved utility
• Low RDS(on) of 7 mΩ minimises power loss
• Features enhancement mode operation to enhance efficiency
• Integrated ruggedness with avalanche and dynamic dV/dt capabilities
• Fully characterised capacitance for precise performance optimisation

Applications

• Utilised in high-efficiency synchronous rectification systems
• Employed within uninterruptible power supplies for dependable energy backup
• Suitable for high-speed power switching circuits
• Designed for hard-switched and high-frequency

How does the low RDS(on) impact efficiency?

The low RDS(on) reduces heat generation during operation, leading to enhanced power delivery efficiency.

What is the significance of avalanche capability?

Avalanche capability protects the device from excessive voltage spikes, promoting stable performance under challenging conditions.

Can this device be used in high-frequency applications?

Yes, this MOSFET is designed for high-frequency circuits, making it suitable for various advanced applications.

What is the maximum current it can handle at elevated temperatures?

At a case temperature of 100°C, the maximum continuous drain current can reach 92 A, ensuring dependable performance.

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