MPN

Infineon HEXFET N-Channel MOSFET, 130 A, 100 V, 3-Pin TO-220AB IRFB4310PBF

RS Stock No.:: 650-4744
Mfr. Part No.:: IRFB4310PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 130 A, 100 V, 3-Pin TO-220AB IRFB4310PBF

Bulk discount available

Subtotal (1 unit)*

£2.20

(exc. VAT)

£2.64

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

5 unit(s) ready to ship
Plus 188 unit(s) shipping from 11 September 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
1 - 9	£2.20
10 - 24	£1.98
25 - 49	£1.85
50 - 99	£1.72
100 +	£1.61

*price indicative

RS Stock No.:: 650-4744
Mfr. Part No.:: IRFB4310PBF
Brand:: Infineon

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

Infineon HEXFET Series MOSFET, 130A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFB4310PBF

This robust and efficient power transistor is designed for high-performance applications in automation, electronics, and the electrical industry. The N-channel technology provides advantages in power management and switching capabilities. Its operating temperature range of -55°C to +175°C enhances its versatility and reliability across various environments.

Features & Benefits

• Supports up to 130A continuous drain current for substantial load demands
• Operates with a maximum voltage of 100 V for improved utility
• Low RDS(on) of 7 mΩ minimises power loss
• Features enhancement mode operation to enhance efficiency
• Integrated ruggedness with avalanche and dynamic dV/dt capabilities
• Fully characterised capacitance for precise performance optimisation

Applications

• Utilised in high-efficiency synchronous rectification systems
• Employed within uninterruptible power supplies for dependable energy backup
• Suitable for high-speed power switching circuits
• Designed for hard-switched and high-frequency

How does the low RDS(on) impact efficiency?

The low RDS(on) reduces heat generation during operation, leading to enhanced power delivery efficiency.

What is the significance of avalanche capability?

Avalanche capability protects the device from excessive voltage spikes, promoting stable performance under challenging conditions.

Can this device be used in high-frequency applications?

Yes, this MOSFET is designed for high-frequency circuits, making it suitable for various advanced applications.

What is the maximum current it can handle at elevated temperatures?

At a case temperature of 100°C, the maximum continuous drain current can reach 92 A, ensuring dependable performance.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	130 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	300 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Width	4.82mm
	Length	10.66mm
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	170 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V
	Height	9.02mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 130 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 300 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Width 4.82mm
	Length 10.66mm
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 170 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V
	Height 9.02mm

Be the first to know about our latest products and services

Join our mailing list today:

The personal information you provide to us when signing up to the mailing list will be processed in line with our privacy policy.