Infineon LogicFET Type N-Channel MOSFET, 130 A, 40 V Enhancement, 3-Pin TO-220 IRL1004PBF

RS Stock No.:: 541-2105
Distrelec Article No.:: 303-41-389
Mfr. Part No.:: IRL1004PBF
Brand:: Infineon

Infineon LogicFET Type N-Channel MOSFET, 130 A, 40 V Enhancement, 3-Pin TO-220 IRL1004PBF

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Units	Per unit
1 - 4	£2.42
5 - 9	£2.35
10 - 14	£2.30
15 - 24	£2.22
25 +	£2.19

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RS Stock No.:: 541-2105
Distrelec Article No.:: 303-41-389
Mfr. Part No.:: IRL1004PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	130A
	Maximum Drain Source Voltage Vds	40V
	Series	LogicFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	7mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	200W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	100nC
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Width	4.69 mm
	Standards/Approvals	No
	Length	10.54mm
	Distrelec Product Id	30341389
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 130A
	Maximum Drain Source Voltage Vds 40V
	Series LogicFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 7mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 200W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 100nC
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Width 4.69 mm
	Standards/Approvals No
	Length 10.54mm
	Distrelec Product Id 30341389
	Automotive Standard No

COO (Country of Origin):: CN

Infineon LogicFET Series MOSFET, 130A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL1004PBF

This high-performance MOSFET employs Si technology and is designed for efficient power management in a variety of electronic applications. The enhancement mode N-channel structure ensures effective operation, making it suitable for modern automation and electrical systems, particularly in high power circuits.

Features & Benefits

• Continuous drain current capacity of up to 130A

• Maximum drain-source voltage of 40V ensuring robust performance

• Low Rds(on) of 7mΩ to decrease heat generation

• High thermal stability with a maximum operating temperature of +175°C

• Compact TO-220AB package allows for versatile mounting options

Applications

• High-efficiency power supply circuits

• Automotive and industrial automation systems

• Energy management and conversion systems

How does the Rds(on) contribute to the efficiency of the device?

A low Rds(on) of 7mΩ minimises power losses during operation, thereby reducing heat and enhancing overall efficiency in power applications.

What is the significance of the operating temperature range?

The device is capable of functioning within a wide temperature range of -55°C to +175°C, ensuring dependable performance across diverse environmental conditions and minimising the risk of thermal failure.

Can it be used for high-frequency switching applications?

Yes, it is designed for fast switching capabilities, making it suitable for high-frequency operations, thus improving performance in communication and control systems.

What considerations should be taken for installation?

Utilise appropriate thermal management techniques, such as a suitable heatsink, as high-power devices need effective heat dissipation to maintain functionality and reliability.

What happens if the gate-source voltage exceeds the maximum rating?

Exceeding the maximum gate-source voltage may result in device failure, so it is vital to adhere to the specified limits to ensure longevity and prevent damage.