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Infineon LogicFET N-Channel MOSFET, 130 A, 40 V, 3-Pin TO-220AB IRL1004PBF

RS Stock No.:: 541-2105
Distrelec Article No.:: 303-41-389
Mfr. Part No.:: IRL1004PBF
Brand:: Infineon

Infineon LogicFET N-Channel MOSFET, 130 A, 40 V, 3-Pin TO-220AB IRL1004PBF

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£2.42

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£2.90

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Units	Per unit
1 - 4	£2.42
5 - 9	£2.35
10 - 14	£2.30
15 - 24	£2.22
25 +	£2.19

*price indicative

RS Stock No.:: 541-2105
Distrelec Article No.:: 303-41-389
Mfr. Part No.:: IRL1004PBF
Brand:: Infineon

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon LogicFET Series MOSFET, 130A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL1004PBF

This high-performance MOSFET employs Si technology and is designed for efficient power management in a variety of electronic applications. The enhancement mode N-channel structure ensures effective operation, making it suitable for modern automation and electrical systems, particularly in high power circuits.

Features & Benefits

• Continuous drain current capacity of up to 130A
• Maximum drain-source voltage of 40V ensuring robust performance
• Low Rds(on) of 7mΩ to decrease heat generation
• High thermal stability with a maximum operating temperature of +175°C
• Compact TO-220AB package allows for versatile mounting options

Applications

• High-efficiency power supply circuits
• Automotive and industrial automation systems
• Energy management and conversion systems

How does the Rds(on) contribute to the efficiency of the device?

A low Rds(on) of 7mΩ minimises power losses during operation, thereby reducing heat and enhancing overall efficiency in power applications.

What is the significance of the operating temperature range?

The device is capable of functioning within a wide temperature range of -55°C to +175°C, ensuring dependable performance across diverse environmental conditions and minimising the risk of thermal failure.

Can it be used for high-frequency switching applications?

Yes, it is designed for fast switching capabilities, making it suitable for high-frequency operations, thus improving performance in communication and control systems.

What considerations should be taken for installation?

Utilise appropriate thermal management techniques, such as a suitable heatsink, as high-power devices need effective heat dissipation to maintain functionality and reliability.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	130 A
	Maximum Drain Source Voltage	40 V
	Series	LogicFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	200 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	100 nC @ 4.5 V
	Width	4.69mm
	Number of Elements per Chip	1
	Length	10.54mm
	Transistor Material	Si
	Forward Diode Voltage	1.3V
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 130 A
	Maximum Drain Source Voltage 40 V
	Series LogicFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 200 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 100 nC @ 4.5 V
	Width 4.69mm
	Number of Elements per Chip 1
	Length 10.54mm
	Transistor Material Si
	Forward Diode Voltage 1.3V
	Height 8.77mm
	Minimum Operating Temperature -55 °C

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