Name: Infineon IMW65 SiC N-Channel MOSFET, 32.8 A, 650 V, 3-Pin PG-TO247-3 IMW65R060M2HXKSA1
Brand: Infineon
SKU: 351-867
Price: 8.02 GBP
Availability: OutOfStock

The Infineon CoolSiC MOSFET 650 V, 60 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Excellent figures of merit (FOMs)
Best in class RDS(on)
High robustness and overall quality
Flexible driving voltage range
Support for unipolar driving (VGSoff=0)
Best immunity against turn-on effects
Improved package interconnect with .XT

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	32.8 A
	Maximum Drain Source Voltage	650 V
	Series	IMW65
	Package Type	PG-TO247-3
	Mounting Type	Through Hole
	Pin Count	3
	Channel Mode	Enhancement
	Number of Elements per Chip	1
	Transistor Material	SiC

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 32.8 A
	Maximum Drain Source Voltage 650 V
	Series IMW65
	Package Type PG-TO247-3
	Mounting Type Through Hole
	Pin Count 3
	Channel Mode Enhancement
	Number of Elements per Chip 1
	Transistor Material SiC

Infineon IMW65 SiC N-Channel MOSFET, 32.8 A, 650 V, 3-Pin PG-TO247-3 IMW65R060M2HXKSA1

Related links

Be the first to know about our latest products and services