Infineon CoolSiC Type N-Channel MOSFET, 46 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R040M2HXKSA1
- RS Stock No.:
- 349-064
- Mfr. Part No.:
- IMW65R040M2HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£8.43
(exc. VAT)
£10.12
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 240 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £8.43 |
| 10 - 99 | £7.59 |
| 100 - 499 | £7.00 |
| 500 - 999 | £6.49 |
| 1000 + | £5.82 |
*price indicative
- RS Stock No.:
- 349-064
- Mfr. Part No.:
- IMW65R040M2HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 49mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 172W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 49mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 172W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and excellent ease of use. This MOSFET is designed to enable cost effective, highly efficient, and simplified designs, addressing the ever-growing demands of modern power systems and markets. It is an ideal solution for achieving high system efficiency in a wide range of applications, delivering reliable performance and superior functionality.
Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
Related links
- Infineon IMW SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-3 IMW65R020M2HXKSA1
- Infineon IMW SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-3 IMW65R015M2HXKSA1
- Infineon IMW SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-3 IMW65R050M2HXKSA1
- Infineon IMW SiC N-Channel MOSFET 1700 V, 4-Pin PG-TO247-3 IMWH170R1K0M1XKSA1
- Infineon IMW SiC N-Channel MOSFET 1700 V, 4-Pin PG-TO247-3 IMWH170R650M1XKSA1
- Infineon IMW SiC N-Channel MOSFET 1700 V, 4-Pin PG-TO247-3 IMWH170R450M1XKSA1
- Infineon IMZ SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-4 IMZA65R040M2HXKSA1
- Infineon IMW65 SiC N-Channel MOSFET 650 V, 3-Pin PG-TO247-3 IMW65R060M2HXKSA1