onsemi N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 NTHL065N65S3F

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

£8.69

(exc. VAT)

£10.43

(inc. VAT)

Add to Basket
Select or type quantity
Being discontinued
  • Final 1,798 unit(s), ready to ship
Units
Per unit
1 - 9£8.69
10 +£7.49

*price indicative

RS Stock No.:
178-4468
Mfr. Part No.:
NTHL065N65S3F
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

337 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

98 nC @ 10 V

Width

4.82mm

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Height

20.82mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features:
700V@TJ=150
Ultra Low Gate Charge (Typ.Qg=98nC)
Low Effective Output Capacitance (Typ.Coss (eff.)=876pF)
Excellent body diode performance (lowQrr,robust body diode)
Optimized Capacitance


Typ. RDS(on)=54mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Higher system reliability in LLC and Phase shift fullbridge circuit
Lower peak Vds and lower Vgs oscillation
Applications:
Telecommunication
Cloud system
Industrial
End Products:
Telecom power
Server power
EV charger
Solar/UPS

Related links