onsemi N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 NTHL065N65S3F

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Subtotal (1 tube of 30 units)*

£126.36

(exc. VAT)

£151.62

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 90£4.212£126.36
120 - 240£4.103£123.09
270 - 480£3.997£119.91
510 +£3.896£116.88

*price indicative

RS Stock No.:
178-4255
Mfr. Part No.:
NTHL065N65S3F
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

337 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.82mm

Length

15.87mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

98 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

COO (Country of Origin):
CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features:
700V@TJ=150
Ultra Low Gate Charge (Typ.Qg=98nC)
Low Effective Output Capacitance (Typ.Coss (eff.)=876pF)
Excellent body diode performance (lowQrr,robust body diode)
Optimized Capacitance


Typ. RDS(on)=54mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Higher system reliability in LLC and Phase shift fullbridge circuit
Lower peak Vds and lower Vgs oscillation
Applications:
Telecommunication
Cloud system
Industrial
End Products:
Telecom power
Server power
EV charger
Solar/UPS

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