Infineon HEXFET Type N-Channel MOSFET, 87 A, 100 V Enhancement, 3-Pin TO-220AB

RS Stock No.:: 919-4851
Mfr. Part No.:: IRFZ24NPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 87 A, 100 V Enhancement, 3-Pin TO-220AB

Bulk discount available

Subtotal (1 tube of 50 units)*

£17.85

(exc. VAT)

£21.40

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

2,000 unit(s) shipping from 15 April 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	£0.357	£17.85
100 - 200	£0.275	£13.75
250 - 450	£0.257	£12.85
500 - 1200	£0.239	£11.95
1250 +	£0.221	£11.05

*price indicative

RS Stock No.:: 919-4851
Mfr. Part No.:: IRFZ24NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	87A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.009Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	71nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	200W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC TO-220AB
	Length	15.24in
	Height	8.77mm
	Width	10.54 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 87A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.009Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 71nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 200W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC TO-220AB
	Length 15.24in
	Height 8.77mm
	Width 10.54 mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRFZ24NPBF

This MOSFET is designed to provide exceptional performance in a range of electronic applications. It serves as a key component in automation and control systems, enhancing both efficiency and reliability. Its capabilities are crucial for optimising system operations within the electrical and mechanical industries.

Features & Benefits

• High current handling capability of up to 17A for demanding applications

• Maximum operating voltage of 55V for diverse usage

• Low RDS(on) for minimised power loss during operation

• High thermal tolerance up to +175°C for consistent reliability

• Through-hole mounting for straightforward installation and maintenance

• Utilises enhancement mode for enhanced control in circuits

Applications

• Employed in power management systems to improve efficiency

• Suitable for motor control that require high current

• Utilised in automotive electronics for robust performance

• Ideal for HVAC systems where dependability is essential

• Applied in renewable energy systems for enhanced durability

What operating temperature range is suitable for optimal performance?

The product operates effectively from -55°C to +175°C, ensuring durability under various conditions.

How can I integrate this into my current circuit design?

It features a TO-220AB package type, simplifying integration into existing systems using standard PCB layouts.

What precautions should be taken during installation?

Ensure the mounting area is clean, and use appropriate thermal management to maximise performance and minimise heat-related issues.

Can it handle continuous high currents?

This product supports a continuous drain current of up to 17A, making it fit for high-demand applications.

What parameters should I monitor for optimal operation?

Monitor the drain-source voltage to ensure it remains within safe limits, specifically below 55V.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

Explore the Infineon range today