Infineon HEXFET Type N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220
- RS Stock No.:
- 260-5056
- Mfr. Part No.:
- AUIRF1404
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£101.10
(exc. VAT)
£121.30
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 950 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £2.022 | £101.10 |
*price indicative
- RS Stock No.:
- 260-5056
- Mfr. Part No.:
- AUIRF1404
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 202A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Maximum Power Dissipation Pd | 333W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Length | 16.51mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 202A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Maximum Power Dissipation Pd 333W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Length 16.51mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFET is specifically design for automotive applications. This power MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Advanced process technology
Ultra low on resistance
Fast switching
Repetitive avalanche allowed up to Tjmax
Related links
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