Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin TO-220AB IRLB3034PBF
- RS Stock No.:
- 688-7204
- Mfr. Part No.:
- IRLB3034PBF
- Brand:
- Infineon
Subtotal (1 pack of 2 units)*
£4.98
(exc. VAT)
£5.98
(inc. VAT)
FREE delivery for orders over £50.00
- 120 unit(s) ready to ship
- Plus 102 unit(s) ready to ship from another location
- Plus 136 unit(s) shipping from 30 October 2025
Units | Per unit | Per Pack* |
---|---|---|
2 - 18 | £2.49 | £4.98 |
20 - 48 | £2.24 | £4.48 |
50 - 98 | £2.09 | £4.18 |
100 - 198 | £1.965 | £3.93 |
200 + | £1.82 | £3.64 |
*price indicative
- RS Stock No.:
- 688-7204
- Mfr. Part No.:
- IRLB3034PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 343 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 375 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 108 nC @ 4.5 V | |
Width | 4.83mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Length | 10.67mm | |
Forward Diode Voltage | 1.3V | |
Height | 9.02mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 343 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 375 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 108 nC @ 4.5 V | ||
Width 4.83mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Forward Diode Voltage 1.3V | ||
Height 9.02mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon HEXFET Series MOSFET, 343A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRLB3034PBF
Features & Benefits
• Optimised for logic level drive for simplified control
• Designed for high-speed power switching requirements
• Wide operating temperature range from -55°C to +175°C
• Superior gate threshold of 1V to 2.5V benefits low voltage operations
Applications
• Utilised in high efficiency synchronous rectification setups
• Suitable for uninterruptible power supplies
• Effective in hard switched and high-frequency circuits
What are the maximum power dissipation capabilities of this component?
How does the low RDS(on) contribute to performance?
Can this MOSFET be used in automation systems?
What mounting options does this component offer?
How might this MOSFET improve power management in electronic circuits?
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