Infineon HEXFET N-Channel MOSFET, 20 A, 100 V, 3-Pin TO-220 IRFI540NPBF
- RS Stock No.:
- 541-2470
- Distrelec Article No.:
- 303-41-337
- Mfr. Part No.:
- IRFI540NPBF
- Brand:
- Infineon
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£1.33
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£1.60
(inc. VAT)
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Units | Per unit |
---|---|
1 - 9 | £1.33 |
10 - 49 | £1.22 |
50 - 99 | £1.12 |
100 - 249 | £1.04 |
250 + | £0.96 |
*price indicative
- RS Stock No.:
- 541-2470
- Distrelec Article No.:
- 303-41-337
- Mfr. Part No.:
- IRFI540NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 20 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220 | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 52 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 54 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Length | 10.63mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 94 nC @ 10 V | |
Width | 4.83mm | |
Height | 8.9mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 52 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 54 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 10.63mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 94 nC @ 10 V | ||
Width 4.83mm | ||
Height 8.9mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 100V, Infineon
Infineon HEXFET Series MOSFET, 20A Maximum Continuous Drain Current, 54W Maximum Power Dissipation - IRFI540NPBF
Features & Benefits
• Voltage rating of 100V for durable performance
• Low gate threshold voltage enhances switching efficiency
• High power dissipation capability of up to 54W for durability
• N-channel enhancement mode design for a variety of applications
• Low drain-source resistance of 52 mΩ minimises energy loss
Applications
• Applicable in automotive power management systems
• Utilised in motor control systems for increased efficiency
• Important for power conversion in renewable energy systems
• Employed in automated machinery for effective control processes
What is the maximum continuous current rating for this device?
How does the gate threshold voltage affect performance?
Can this device operate in high-temperature environments?
Is there a specific mounting type recommended for optimal performance?
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