Infineon HEXFET N-Channel MOSFET, 20 A, 100 V, 3-Pin TO-220 IRFI540NPBF

RS Stock No.:: 541-2470
Distrelec Article No.:: 303-41-337
Mfr. Part No.:: IRFI540NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 20 A, 100 V, 3-Pin TO-220 IRFI540NPBF

Bulk discount available

Subtotal (1 unit)*

£1.33

(exc. VAT)

£1.60

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

45 unit(s) ready to ship
Plus 1,345 unit(s) shipping from 17 October 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
1 - 9	£1.33
10 - 49	£1.22
50 - 99	£1.12
100 - 249	£1.04
250 +	£0.96

*price indicative

RS Stock No.:: 541-2470
Distrelec Article No.:: 303-41-337
Mfr. Part No.:: IRFI540NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	20 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	52 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	54 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.83mm
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Length	10.63mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	94 nC @ 10 V
	Forward Diode Voltage	1.3V
	Minimum Operating Temperature	-55 °C
	Height	8.9mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 20 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 52 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 54 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.83mm
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Length 10.63mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 94 nC @ 10 V
	Forward Diode Voltage 1.3V
	Minimum Operating Temperature -55 °C
	Height 8.9mm

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 20A Maximum Continuous Drain Current, 54W Maximum Power Dissipation - IRFI540NPBF

This MOSFET is developed for high-performance applications in the electronics industry, playing a crucial role in power management and providing a dependable solution for switching and amplifying electronic signals. It can manage significant voltage and current loads, ensuring efficiency in modern electronic devices.

Features & Benefits

• Continuous drain current rating up to 20A
• Voltage rating of 100V for durable performance
• Low gate threshold voltage enhances switching efficiency
• High power dissipation capability of up to 54W for durability
• N-channel enhancement mode design for a variety of applications
• Low drain-source resistance of 52 mΩ minimises energy loss

Applications

• Used in power supplies for electronic circuits
• Applicable in automotive power management systems
• Utilised in motor control systems for increased efficiency
• Important for power conversion in renewable energy systems
• Employed in automated machinery for effective control processes

What is the maximum continuous current rating for this device?

The device supports a maximum continuous drain current of 20A, accommodating various applications.

How does the gate threshold voltage affect performance?

The gate threshold voltage ranges from 2V to 4V, facilitating efficient switching at lower control voltages and enhancing performance.

Can this device operate in high-temperature environments?

Yes, it can function at temperatures reaching +175°C, ensuring performance in challenging conditions.

Is there a specific mounting type recommended for optimal performance?

It is suited for through-hole mounting, allowing secure connections and effective thermal management in different applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.