Infineon HEXFET N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB IRLB3813PBF
- RS Stock No.:
- 913-4032
- Mfr. Part No.:
- IRLB3813PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£42.75
(exc. VAT)
£51.30
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,000 unit(s) shipping from 11 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.855 | £42.75 |
| 100 - 200 | £0.718 | £35.90 |
| 250 - 450 | £0.675 | £33.75 |
| 500 - 950 | £0.632 | £31.60 |
| 1000 + | £0.61 | £30.50 |
*price indicative
- RS Stock No.:
- 913-4032
- Mfr. Part No.:
- IRLB3813PBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 260 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 230 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 57 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.83mm | |
| Height | 9.02mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 260 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 57 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 4.83mm | ||
Height 9.02mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin TO-220AB IRLB3813PBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin TO-220AB IRL7833PBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin TO-220AB IRLB8743PBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin TO-220AB IRLB8721PBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin TO-220AB IRLB8748PBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin TO-220AB IRLB8314PBF
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin D2PAK AUIRFS3107TRL
- Infineon HEXFET N-Channel MOSFET 75 V D²pak 7 Pin IRFS3107TRL7PP