Infineon HEXFET N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB IRLB3813PBF
- RS Stock No.:
- 913-4032
- Mfr. Part No.:
- IRLB3813PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£42.75
(exc. VAT)
£51.30
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,000 unit(s) shipping from 11 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.855 | £42.75 |
| 100 - 200 | £0.718 | £35.90 |
| 250 - 450 | £0.675 | £33.75 |
| 500 - 950 | £0.632 | £31.60 |
| 1000 + | £0.61 | £30.50 |
*price indicative
- RS Stock No.:
- 913-4032
- Mfr. Part No.:
- IRLB3813PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 260 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 230 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 57 nC @ 4.5 V | |
| Width | 4.83mm | |
| Transistor Material | Si | |
| Height | 9.02mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 260 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 57 nC @ 4.5 V | ||
Width 4.83mm | ||
Transistor Material Si | ||
Height 9.02mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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