Infineon HEXFET N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB IRLB3813PBF
- RS Stock No.:
- 725-9313
- Mfr. Part No.:
- IRLB3813PBF
- Brand:
- Infineon
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Subtotal (1 pack of 2 units)*
£2.02
(exc. VAT)
£2.42
(inc. VAT)
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In Stock
- 4 unit(s) ready to ship from another location
- Plus 2 unit(s) shipping from 30 October 2025
- Plus 1,000 unit(s) shipping from 18 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.01 | £2.02 |
| 20 - 48 | £0.775 | £1.55 |
| 50 - 98 | £0.725 | £1.45 |
| 100 - 198 | £0.68 | £1.36 |
| 200 + | £0.625 | £1.25 |
*price indicative
- RS Stock No.:
- 725-9313
- Mfr. Part No.:
- IRLB3813PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 260 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 230 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 4.83mm | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 57 nC @ 4.5 V | |
| Height | 9.02mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 260 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 57 nC @ 4.5 V | ||
Height 9.02mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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