Infineon HEXFET N-Channel MOSFET, 190 A, 40 V, 3-Pin TO-220AB IRF1404ZPBF

RS Stock No.:: 145-9431
Mfr. Part No.:: IRF1404ZPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 190 A, 40 V, 3-Pin TO-220AB IRF1404ZPBF

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Subtotal (1 tube of 50 units)*

£41.80

(exc. VAT)

£50.15

(inc. VAT)

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1,000 unit(s) shipping from 08 January 2026

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Units	Per unit	Per Tube*
50 - 50	£0.836	£41.80
100 - 200	£0.794	£39.70
250 - 450	£0.76	£38.00
500 - 1200	£0.71	£35.50
1250 +	£0.668	£33.40

*price indicative

RS Stock No.:: 145-9431
Mfr. Part No.:: IRF1404ZPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	190 A
	Maximum Drain Source Voltage	40 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	220 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Typical Gate Charge @ Vgs	100 nC @ 10 V
	Width	4.69mm
	Length	10.54mm
	Maximum Operating Temperature	+175 °C
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 190 A
	Maximum Drain Source Voltage 40 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 220 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Transistor Material Si
	Typical Gate Charge @ Vgs 100 nC @ 10 V
	Width 4.69mm
	Length 10.54mm
	Maximum Operating Temperature +175 °C
	Height 8.77mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRF1404ZPBF

This MOSFET is a high-performance power component designed for a variety of applications in the automotive and industrial sectors. With a robust continuous drain current of 180A and a maximum drain-source voltage of 40V, it excels in demanding environments. The TO-220AB package type facilitates easy mounting, ensuring efficient integration into electronic circuits and systems.

Features & Benefits

• Utilises HEXFET technology for enhanced efficiency
• Designed for enhancement mode to optimise switching
• Provides fast switching speed to boost overall efficiency
• Capable of repetitive avalanche to enhance reliability

Applications

• Ideal for use in motor control circuits
• Utilised in power supplies and converters
• Designed for use in automotive
• Suited for various industrial automation systems
• Effective in power management and switching

How does the low on-resistance benefit my applications?

The low on-resistance of 2.7mΩ reduces conduction losses, improving overall efficiency in power conversion and energy management systems.

What happens if the device exceeds its maximum operating temperature?

Exceeding the maximum operating temperature of +175°C can lead to performance degradation and potential failure, emphasising the need for adequate thermal management.

Can this be used in parallel configurations?

Yes, when used in parallel configurations, it is crucial to balance current sharing between devices to avoid overheating and maximise performance.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.