N-Channel MOSFET, 190 A, 100 V, 7-Pin D2PAK-7 Infineon IRFS4010TRL7PP

RS Stock No.:: 168-6011
Mfr. Part No.:: IRFS4010TRL7PP
Brand:: Infineon

N-Channel MOSFET, 190 A, 100 V, 7-Pin D2PAK-7 Infineon IRFS4010TRL7PP

Available to back order for despatch 05/08/2024

Price Each (On a Reel of 800)

£2.06

(exc. VAT)

£2.47

(inc. VAT)

Units	Per unit	Per Reel*
800 +	£2.06	£1,648.00

*price indicative

RS Stock No.:: 168-6011
Mfr. Part No.:: IRFS4010TRL7PP
Brand:: Infineon

Technical Reference

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	190 A
Maximum Drain Source Voltage	100 V
Package Type	D2PAK-7
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	380 W
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	10.67mm
Typical Gate Charge @ Vgs	150 nC @ 10 V
Maximum Operating Temperature	+175 °C
Width	9.65mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.3V
Height	4.83mm