Infineon HEXFET N-Channel MOSFET, 190 A, 100 V, 7-Pin D2PAK-7 IRFS4010TRL7PP

Subtotal (1 reel of 800 units)*

£1,384.00

(exc. VAT)

£1,664.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 01 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
800 +£1.73£1,384.00

*price indicative

RS Stock No.:
168-6011
Mfr. Part No.:
IRFS4010TRL7PP
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

190 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK-7

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

380 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.67mm

Width

9.65mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

150 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

4.83mm

COO (Country of Origin):
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links