Infineon IPT Type N-Channel MOSFET, 190 A, 150 V Enhancement, 8-Pin HSOF-8 IPT039N15N5ATMA1

Bulk discount available

Subtotal (1 unit)*

£4.66

(exc. VAT)

£5.59

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 3,800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9£4.66
10 - 24£4.43
25 - 49£4.24
50 - 99£4.06
100 +£3.78

*price indicative

Packaging Options:
RS Stock No.:
249-3349
Mfr. Part No.:
IPT039N15N5ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

190A

Maximum Drain Source Voltage Vds

150V

Package Type

HSOF-8

Series

IPT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon Optimos 5 power mosfet is N-Channel mosfet offers very low on-resistance and superior thermal resistance. This device is Pb (Lead) and halogen free. It comes in a surface mount, PG-HSOF-8 package.

Drain to Source Voltage (Vdss) is 150 V

Continuous drain current is (Id) @ 25°C is 21 A (Ta), 190 A (Tc)

Drive Voltages (Max Rds On, Min Rds On) are 8V & 10V

Operating temperature is from -55°C to 175°C (TJ)

Related links