Infineon Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 IPB013N06NF2SATMA1

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Subtotal (1 pack of 2 units)*

£6.32

(exc. VAT)

£7.58

(inc. VAT)

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2 - 18£3.16£6.32
20 - 48£2.845£5.69
50 - 98£2.65£5.30
100 - 198£2.465£4.93
200 +£2.305£4.61

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Packaging Options:
RS Stock No.:
262-5848
Mfr. Part No.:
IPB013N06NF2SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

190 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21

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