Infineon iPB Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 262-5858
- Mfr. Part No.:
- IPB029N06NF2SATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 800 units)*
£510.40
(exc. VAT)
£612.80
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | £0.638 | £510.40 |
| 1600 + | £0.622 | £497.60 |
*price indicative
- RS Stock No.:
- 262-5858
- Mfr. Part No.:
- IPB029N06NF2SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.15mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.15mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.
Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
Related links
- Infineon Dual SiC N-Channel MOSFET 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 60 V, 3-Pin PG-TO263-3 IPB015N06NF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 40 V, 3-Pin PG-TO263-3 IPB011N04NF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 60 V, 3-Pin PG-TO263-3 IPB013N06NF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 40 V, 3-Pin PG-TO263-3 IPB012N04NF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 40 V, 3-Pin PG-TO263-3 IPB014N04NF2SATMA1