Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1

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Subtotal (1 pack of 5 units)*

£7.30

(exc. VAT)

£8.75

(inc. VAT)

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  • 550 unit(s) ready to ship
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Units
Per unit
Per Pack*
5 - 45£1.46£7.30
50 - 120£1.328£6.64
125 - 245£1.242£6.21
250 - 495£1.154£5.77
500 +£1.066£5.33

*price indicative

Packaging Options:
RS Stock No.:
262-5859
Mfr. Part No.:
IPB029N06NF2SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

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