MPN

Infineon iPB Type N-Channel MOSFET, 120 A, 100 V N, 3-Pin TO-263

RS Stock No.:: 258-3785
Mfr. Part No.:: IPB020N10N5LFATMA1
Brand:: Infineon

Infineon iPB Type N-Channel MOSFET, 120 A, 100 V N, 3-Pin TO-263

Subtotal (1 reel of 1000 units)*

£2,085.00

(exc. VAT)

£2,502.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

1,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
1000 +	£2.085	£2,085.00

*price indicative

RS Stock No.:: 258-3785
Mfr. Part No.:: IPB020N10N5LFATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	iPB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	N
	Forward Voltage Vf	0.89V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	195nC
	Maximum Power Dissipation Pd	313W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS, IEC 61249-2-21
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series iPB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode N
	Forward Voltage Vf 0.89V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 195nC
	Maximum Power Dissipation Pd 313W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS, IEC 61249-2-21
	Automotive Standard No

Datasheet - IPB020N10N5LFATMA1

The Infineon OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

High max. pulse current

High continuous pulse current

Rugged linear mode operation

Low conduction losses