Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263
- RS Stock No.:
- 242-5826
- Mfr. Part No.:
- IPB60R045P7ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£2,630.00
(exc. VAT)
£3,160.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 04 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £2.63 | £2,630.00 |
*price indicative
- RS Stock No.:
- 242-5826
- Mfr. Part No.:
- IPB60R045P7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon super junction MOSFET is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Integrated gate resistor RG
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness > 2kV (HBM) for all products
Related links
- Infineon N-Channel MOSFET 600 V, 3-Pin D2PAK IPB60R045P7ATMA1
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRFS4510TRLPBF
- Vishay N-Channel MOSFET 600 V, 3-Pin TO-247AC SIHG039N60EF-GE3
- Infineon N-Channel MOSFET 600 V, 3-Pin D2PAK IPB60R070CFD7ATMA1
- Infineon N-Channel MOSFET 600 V, 3-Pin D2PAK IPB60R099CPAATMA1
- Infineon N-Channel MOSFET 650 V, 3-Pin D2PAK IPB65R115CFD7AATMA1
- Infineon N-Channel MOSFET 150 V, 3-Pin D2PAK IPB048N15N5LFATMA1
- Infineon N-Channel MOSFET 650 V, 3-Pin D2PAK IPB65R660CFDAATMA1


