MPN

Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 7-Pin TO-263 IPB017N10N5ATMA1

RS Stock No.:: 242-5817
Mfr. Part No.:: IPB017N10N5ATMA1
Brand:: Infineon

Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 7-Pin TO-263 IPB017N10N5ATMA1

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£4.77

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£5.72

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Units	Per unit
1 - 9	£4.77
10 - 24	£4.53
25 - 49	£4.35
50 - 99	£4.15
100 +	£3.85

*price indicative

RS Stock No.:: 242-5817
Mfr. Part No.:: IPB017N10N5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	273A
	Maximum Drain Source Voltage Vds	100V
	Series	iPB
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 273A
	Maximum Drain Source Voltage Vds 100V
	Series iPB
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPB017N10N5ATMA1

The Infineon MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

Optimized for synchronous rectification

Ideal for high switching frequency

Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation

Highest system efficiency

Reduced switching and conduction losses