Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin D2PAK IRLS3034TRLPBF

Subtotal (1 reel of 800 units)*

£1,040.00

(exc. VAT)

£1,248.00

(inc. VAT)

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Units
Per unit
Per Reel*
800 +£1.30£1,040.00

*price indicative

RS Stock No.:
168-6037
Mfr. Part No.:
IRLS3034TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

343 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

375 W

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Number of Elements per Chip

1

Width

4.83mm

Typical Gate Charge @ Vgs

108 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Height

9.65mm

N-Channel Power MOSFET 40V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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