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Infineon HEXFET N-Channel MOSFET, 250 A, 40 V, 3-Pin D2PAK IRFS7437TRLPBF

RS Stock No.:: 872-4206
Mfr. Part No.:: IRFS7437TRLPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 250 A, 40 V, 3-Pin D2PAK IRFS7437TRLPBF

Subtotal (1 pack of 10 units)*

£8.48

(exc. VAT)

£10.18

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,420 unit(s) ready to ship

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Units	Per unit	Per Pack*
10 +	£0.848	£8.48

*price indicative

RS Stock No.:: 872-4206
Mfr. Part No.:: IRFS7437TRLPBF
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	250 A
	Maximum Drain Source Voltage	40 V
	Package Type	D2PAK (TO-263)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	1.8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.9V
	Minimum Gate Threshold Voltage	2.2V
	Maximum Power Dissipation	230 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	10.67mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	150 nC @ 10 V
	Transistor Material	Si
	Width	9.65mm
	Maximum Operating Temperature	+175 °C
	Height	4.83mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 250 A
	Maximum Drain Source Voltage 40 V
	Package Type D2PAK (TO-263)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 1.8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.9V
	Minimum Gate Threshold Voltage 2.2V
	Maximum Power Dissipation 230 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 10.67mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 150 nC @ 10 V
	Transistor Material Si
	Width 9.65mm
	Maximum Operating Temperature +175 °C
	Height 4.83mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 250A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRFS7437TRLPBF

This MOSFET is intended for high-performance applications that require efficient power management. It is utilised across various sectors and offers robust features suitable for challenging environments. Its ability to manage high current and voltage levels makes it well-suited for advanced technology applications.

Features & Benefits

• Supports a maximum continuous drain current of 250A for high-power applications
• Offers a maximum drain-source voltage of 40V, ensuring reliability in different setups
• Exhibits low Rds(on) of 1.4mΩ, contributing to reduced power losses
• Designed for surface mounting, simplifying installation
• Capable of handling rapid switching applications, which enhances efficiency

Applications

• Suitable for brushed motor drive
• Ideal for battery-powered circuits, enabling efficient power usage
• Employed in half-bridge and full-bridge topologies for precise control
• Utilised in synchronous rectifier to enhance energy savings
• Applicable in resonant mode power supplies for stable performance

How is the power dissipation managed during operation?

Power dissipation is managed through a maximum rating of 230W, ensuring thermal stability under high load conditions.

What is the significance of the low Rds(on) value?

The low Rds(on) value minimises energy loss during operation, improving efficiency in high-current applications.

Can this be used in high-temperature environments?

With an operating temperature range of -55°C to +175°C, it is suitable for diverse applications, including high-temperature environments.

What installation considerations should I be aware of?

Ensure proper thermal management as per specifications to maintain operational efficiency and reliability during intense applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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