Infineon HEXFET N-Channel MOSFET, 250 A, 40 V, 3-Pin D2PAK IRFS7437TRLPBF
- RS Stock No.:
- 872-4206
- Mfr. Part No.:
- IRFS7437TRLPBF
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£8.48
(exc. VAT)
£10.18
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 2,420 unit(s) shipping from 13 October 2025
Units | Per unit | Per Pack* |
---|---|---|
10 + | £0.848 | £8.48 |
*price indicative
- RS Stock No.:
- 872-4206
- Mfr. Part No.:
- IRFS7437TRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 250 A | |
Maximum Drain Source Voltage | 40 V | |
Series | HEXFET | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1.8 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.9V | |
Minimum Gate Threshold Voltage | 2.2V | |
Maximum Power Dissipation | 230 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.67mm | |
Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 9.65mm | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.3V | |
Height | 4.83mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 250 A | ||
Maximum Drain Source Voltage 40 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 9.65mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Height 4.83mm | ||
RoHS Status: Not Applicable
N-Channel Power MOSFET 40V, Infineon
Infineon HEXFET Series MOSFET, 250A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRFS7437TRLPBF
Features & Benefits
• Offers a maximum drain-source voltage of 40V, ensuring reliability in different setups
• Exhibits low Rds(on) of 1.4mΩ, contributing to reduced power losses
• Designed for surface mounting, simplifying installation
• Capable of handling rapid switching applications, which enhances efficiency
Applications
• Ideal for battery-powered circuits, enabling efficient power usage
• Employed in half-bridge and full-bridge topologies for precise control
• Utilised in synchronous rectifier to enhance energy savings
• Applicable in resonant mode power supplies for stable performance
How is the power dissipation managed during operation?
What is the significance of the low Rds(on) value?
Can this be used in high-temperature environments?
What installation considerations should I be aware of?
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