Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 270 A, 40 V, 3-Pin D2PAK AUIRF2804STRL

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£5.68

(exc. VAT)

£6.82

(inc. VAT)

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Packaging Options:
RS Stock No.:
220-7343
Mfr. Part No.:
AUIRF2804STRL
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

270 A

Maximum Drain Source Voltage

40 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.002 o

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

2

The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.

Advanced process technology
Ultra-low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax

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