Infineon HEXFET N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB IRL540NPBF

RS Stock No.:: 919-4882
Mfr. Part No.:: IRL540NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB IRL540NPBF

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Subtotal (1 tube of 50 units)**

£44.30

(exc. VAT)

£53.15

(inc. VAT)

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100 available from Europe for delivery within 2 working day(s).

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Units	Per unit	Per Tube**
50 - 50	£0.886	£44.30
100 - 200	£0.691	£34.55
250 - 450	£0.647	£32.35
500 - 1200	£0.602	£30.10
1250 +	£0.558	£27.90

**price indicative

RS Stock No.:: 919-4882
Mfr. Part No.:: IRL540NPBF
Brand:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRL540NPBF

This MOSFET is an essential component for high-performance circuits, designed to effectively handle high current and voltage applications. It operates with a maximum drain-source voltage of 100V, making it suitable for rigorous environments in automation and electronic systems. Its strong performance and dependable operation enhance efficiency across various electrical systems.

Features & Benefits

• Continuous drain current capability of 36A for demanding applications
• Low Rds(on) of 44mΩ minimises power losses during operation
• Enhancement mode design improves switching characteristics for efficiency
• Power dissipation rating of up to 140W accommodates high-performance scenarios
• Operating temperature range from -55°C to +175°C allows versatility
• Through hole mounting facilitates easy integration into existing systems

Applications

• Power management in industrial automation systems
• Electric motor control in robotics
• DC-DC converters in renewable energy systems
• Power supplies requiring efficient switching functionality
• Consumer electronics for effective power distribution

What are the maximum voltage and current ratings?

The maximum drain-source voltage is 100V, with a continuous drain current of 36A.

How does the low Rds(on) improve performance?

A low Rds(on) of 44mΩ results in minimal power dissipation, enhancing efficiency and reducing thermal load.

What is the significance of the enhancement mode?

This mode allows for improved control over operation, enabling efficient switching and application versatility.

Can it be used in high-temperature environments?

Yes, it operates effectively at temperatures from -55°C to +175°C, suitable for extreme conditions.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	36 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	44 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	140 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	74 nC @ 5 V
Minimum Operating Temperature	-55 °C
Height	8.77mm