Infineon HEXFET N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB IRL540NPBF
- RS Stock No.:
- 919-4882
- Mfr. Part No.:
- IRL540NPBF
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£46.40
(exc. VAT)
£55.70
(inc. VAT)
FREE delivery for orders over £50.00
- 450 unit(s) ready to ship
- Plus 200 unit(s) shipping from 09 October 2025
- Plus 1,000 unit(s) shipping from 04 December 2025
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.928 | £46.40 |
100 - 200 | £0.724 | £36.20 |
250 - 450 | £0.677 | £33.85 |
500 - 1200 | £0.631 | £31.55 |
1250 + | £0.585 | £29.25 |
*price indicative
- RS Stock No.:
- 919-4882
- Mfr. Part No.:
- IRL540NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 36 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 44 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 140 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 74 nC @ 5 V | |
Minimum Operating Temperature | -55 °C | |
Height | 8.77mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 36 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 44 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 74 nC @ 5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 100V, Infineon
Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRL540NPBF
Features & Benefits
• Low Rds(on) of 44mΩ minimises power losses during operation
• Enhancement mode design improves switching characteristics for efficiency
• Power dissipation rating of up to 140W accommodates high-performance scenarios
• Operating temperature range from -55°C to +175°C allows versatility
• Through hole mounting facilitates easy integration into existing systems
Applications
• Electric motor control in robotics
• DC-DC converters in renewable energy systems
• Power supplies requiring efficient switching functionality
• Consumer electronics for effective power distribution
What are the maximum voltage and current ratings?
How does the low Rds(on) improve performance?
What is the significance of the enhancement mode?
Can it be used in high-temperature environments?
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