Infineon HEXFET N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB IRL540NPBF

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RS Stock No.:
541-1219
Distrelec Article No.:
303-41-393
Mfr. Part No.:
IRL540NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

44 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

4.69mm

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

74 nC @ 5 V

Maximum Operating Temperature

+175 °C

Length

10.54mm

Height

8.77mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRL540NPBF


This MOSFET is an essential component for high-performance circuits, designed to effectively handle high current and voltage applications. It operates with a maximum drain-source voltage of 100V, making it suitable for rigorous environments in automation and electronic systems. Its strong performance and dependable operation enhance efficiency across various electrical systems.

Features & Benefits


• Continuous drain current capability of 36A for demanding applications
• Low Rds(on) of 44mΩ minimises power losses during operation
• Enhancement mode design improves switching characteristics for efficiency
• Power dissipation rating of up to 140W accommodates high-performance scenarios
• Operating temperature range from -55°C to +175°C allows versatility
• Through hole mounting facilitates easy integration into existing systems

Applications


• Power management in industrial automation systems
• Electric motor control in robotics
• DC-DC converters in renewable energy systems
• Power supplies requiring efficient switching functionality
• Consumer electronics for effective power distribution

What are the maximum voltage and current ratings?


The maximum drain-source voltage is 100V, with a continuous drain current of 36A.

How does the low Rds(on) improve performance?


A low Rds(on) of 44mΩ results in minimal power dissipation, enhancing efficiency and reducing thermal load.

What is the significance of the enhancement mode?


This mode allows for improved control over operation, enabling efficient switching and application versatility.

Can it be used in high-temperature environments?


Yes, it operates effectively at temperatures from -55°C to +175°C, suitable for extreme conditions.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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