Infineon HEXFET N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB IRL540NPBF
- RS Stock No.:
- 541-1219
- Distrelec Article No.:
- 303-41-393
- Mfr. Part No.:
- IRL540NPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£1.08
(exc. VAT)
£1.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 491 unit(s) shipping from 08 September 2025
- Plus 568 unit(s) shipping from 08 September 2025
- Plus 244 unit(s) shipping from 15 September 2025
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Units | Per unit |
|---|---|
| 1 - 9 | £1.08 |
| 10 - 49 | £0.96 |
| 50 - 99 | £0.90 |
| 100 - 249 | £0.84 |
| 250 + | £0.78 |
*price indicative
- RS Stock No.:
- 541-1219
- Distrelec Article No.:
- 303-41-393
- Mfr. Part No.:
- IRL540NPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 36 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 44 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 140 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Width | 4.69mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 74 nC @ 5 V | |
| Transistor Material | Si | |
| Length | 10.54mm | |
| Maximum Operating Temperature | +175 °C | |
| Height | 8.77mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 36 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 44 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Width 4.69mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 74 nC @ 5 V | ||
Transistor Material Si | ||
Length 10.54mm | ||
Maximum Operating Temperature +175 °C | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
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