Infineon HEXFET N-Channel MOSFET, 36 A, 100 V, 3-Pin D2PAK IRL540NSTRLPBF

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Subtotal (1 reel of 800 units)*

£581.60

(exc. VAT)

£697.60

(inc. VAT)

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Per Reel*
800 - 800£0.727£581.60
1600 +£0.691£552.80

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RS Stock No.:
145-9569
Mfr. Part No.:
IRL540NSTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

63 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

74 nC @ 5 V

Width

11.3mm

Length

10.67mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Height

4.83mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

COO (Country of Origin):
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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