Infineon HEXFET N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB IRF540ZPBF

Bulk discount available

Subtotal (1 tube of 50 units)*

£37.40

(exc. VAT)

£44.90

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 100 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
50 - 50£0.748£37.40
100 - 200£0.591£29.55
250 - 450£0.553£27.65
500 - 1200£0.508£25.40
1250 +£0.471£23.55

*price indicative

RS Stock No.:
124-9001
Mfr. Part No.:
IRF540ZPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

27 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

92 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

42 nC @ 10 V

Length

10.54mm

Transistor Material

Si

Number of Elements per Chip

1

Width

4.69mm

Height

8.77mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRF540ZPBF


This MOSFET is designed to deliver high performance in various electronic applications. Capable of handling a maximum continuous drain current of 36A and a drain-source voltage of 100V, its TO-220AB package ensures effective heat dissipation and stability. With maximum power dissipation rated at 92W, this N-channel device is particularly suited for demanding tasks in electrical and mechanical industries.

Features & Benefits


• Utilises HEXFET technology for enhanced efficiency
• Low Rds(on) of 26.5mΩ minimises power loss
• Fast switching speeds improve operational efficiency
• Supports enhancement mode for reliable performance
• Designed to handle repetitive avalanche conditions

Applications


• Used for motor control and power management
• Ideal for switching power supplies and converters
• Suitable for automotive requiring high efficiency
• Implemented in industrial automation systems
• Effective in electronic devices needing robust performance

What is the significance of the low Rds(on) rating in its performance?


The low Rds(on) rating reduces conduction losses, leading to higher efficiency during operation. It allows for improved thermal performance, which is critical in high-current applications.

How does the maximum drain-source voltage affect operational reliability?


The 100V drain-source voltage rating provides a substantial safety margin for applications, ensuring reliable operation under varying voltage conditions, thus preventing breakdown.

Can this MOSFET handle high-temperature environments?


With a maximum operating temperature of 175°C, it is designed to operate reliably in high-temperature conditions, making it suitable for challenging environments found in automotive and industrial applications.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links