Infineon HEXFET N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB IRF540ZPBF

RS Stock No.:: 124-9001
Mfr. Part No.:: IRF540ZPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB IRF540ZPBF

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Subtotal (1 tube of 50 units)*

£37.40

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£44.90

(inc. VAT)

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Units	Per unit	Per Tube*
50 - 50	£0.748	£37.40
100 - 200	£0.591	£29.55
250 - 450	£0.553	£27.65
500 - 1200	£0.508	£25.40
1250 +	£0.471	£23.55

*price indicative

RS Stock No.:: 124-9001
Mfr. Part No.:: IRF540ZPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	36 A
	Maximum Drain Source Voltage	100 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	27 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	92 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Length	10.54mm
	Width	4.69mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	42 nC @ 10 V
	Number of Elements per Chip	1
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 36 A
	Maximum Drain Source Voltage 100 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 27 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 92 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Length 10.54mm
	Width 4.69mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 42 nC @ 10 V
	Number of Elements per Chip 1
	Height 8.77mm
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRF540ZPBF

This MOSFET is designed to deliver high performance in various electronic applications. Capable of handling a maximum continuous drain current of 36A and a drain-source voltage of 100V, its TO-220AB package ensures effective heat dissipation and stability. With maximum power dissipation rated at 92W, this N-channel device is particularly suited for demanding tasks in electrical and mechanical industries.

Features & Benefits

• Utilises HEXFET technology for enhanced efficiency
• Low Rds(on) of 26.5mΩ minimises power loss
• Fast switching speeds improve operational efficiency
• Supports enhancement mode for reliable performance
• Designed to handle repetitive avalanche conditions

Applications

• Used for motor control and power management
• Ideal for switching power supplies and converters
• Suitable for automotive requiring high efficiency
• Implemented in industrial automation systems
• Effective in electronic devices needing robust performance

What is the significance of the low Rds(on) rating in its performance?

The low Rds(on) rating reduces conduction losses, leading to higher efficiency during operation. It allows for improved thermal performance, which is critical in high-current applications.

How does the maximum drain-source voltage affect operational reliability?

The 100V drain-source voltage rating provides a substantial safety margin for applications, ensuring reliable operation under varying voltage conditions, thus preventing breakdown.

Can this MOSFET handle high-temperature environments?

With a maximum operating temperature of 175°C, it is designed to operate reliably in high-temperature conditions, making it suitable for challenging environments found in automotive and industrial applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.