MPN

Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK IRF540NSTRLPBF

RS Stock No.:: 165-5894
Mfr. Part No.:: IRF540NSTRLPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK IRF540NSTRLPBF

Subtotal (1 reel of 800 units)*

£361.60

(exc. VAT)

£433.60

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

32,800 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
800 +	£0.452	£361.60

*price indicative

RS Stock No.:: 165-5894
Mfr. Part No.:: IRF540NSTRLPBF
Brand:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRLPBF

This high power MOSFET is designed for efficiency and reliability across a variety of applications. Featuring an N-channel configuration, it operates in enhancement mode with a maximum continuous drain current of 33A and a breakdown voltage of 100V. Its surface mount design allows for simple integration into printed circuit boards, enhancing versatility in modern applications.

Features & Benefits

• Low Rds(on) of 44mΩ improves circuit efficiency
• High power dissipation capability of 130W supports robust applications
• Fast switching speed minimises energy loss during operation
• Wide operating temperature range from -55°C to +175°C suits diverse environments
• Lead-free construction adheres to contemporary environmental standards

Applications

• Power management in automation systems
• High-efficiency power supplies for electronics
• Motor control in electrical engineering
• Renewable energy systems for effective energy conversion

What is the maximum gate-to-source voltage for this device?

The maximum gate-to-source voltage is ±20V, allowing for safe operation in typical circuits.

How does this device handle thermal management?

With a maximum power dissipation of 130W and a junction-to-case thermal resistance of 1.15°C/W, it effectively manages heat during operation.

What is the typical gate charge at 10V?

The typical gate charge at a gate-to-source voltage of 10V is 71 nC, ensuring quick response times in switching applications.

Can this device be mounted on standard PCBs?

Yes, it is designed in a D2PAK package, making it suitable for surface mount applications on standard PCB layouts.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	33 A
	Maximum Drain Source Voltage	100 V
	Package Type	D2PAK (TO-263)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	44 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	130 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Width	9.65mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Length	10.67mm
	Typical Gate Charge @ Vgs	71 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Height	4.83mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 33 A
	Maximum Drain Source Voltage 100 V
	Package Type D2PAK (TO-263)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 44 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 130 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Width 9.65mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Length 10.67mm
	Typical Gate Charge @ Vgs 71 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Height 4.83mm

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