Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK IRF540NSTRLPBF

Subtotal (1 reel of 800 units)*

£361.60

(exc. VAT)

£433.60

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 32,800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
800 +£0.452£361.60

*price indicative

RS Stock No.:
165-5894
Mfr. Part No.:
IRF540NSTRLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

44 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Typical Gate Charge @ Vgs

71 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

9.65mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRLPBF


This high power MOSFET is designed for efficiency and reliability across a variety of applications. Featuring an N-channel configuration, it operates in enhancement mode with a maximum continuous drain current of 33A and a breakdown voltage of 100V. Its surface mount design allows for simple integration into printed circuit boards, enhancing versatility in modern applications.

Features & Benefits


• Low Rds(on) of 44mΩ improves circuit efficiency
• High power dissipation capability of 130W supports robust applications
• Fast switching speed minimises energy loss during operation
• Wide operating temperature range from -55°C to +175°C suits diverse environments
• Lead-free construction adheres to contemporary environmental standards

Applications


• Power management in automation systems
• High-efficiency power supplies for electronics
• Motor control in electrical engineering
• Renewable energy systems for effective energy conversion

What is the maximum gate-to-source voltage for this device?


The maximum gate-to-source voltage is ±20V, allowing for safe operation in typical circuits.

How does this device handle thermal management?


With a maximum power dissipation of 130W and a junction-to-case thermal resistance of 1.15°C/W, it effectively manages heat during operation.

What is the typical gate charge at 10V?


The typical gate charge at a gate-to-source voltage of 10V is 71 nC, ensuring quick response times in switching applications.

Can this device be mounted on standard PCBs?


Yes, it is designed in a D2PAK package, making it suitable for surface mount applications on standard PCB layouts.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links