Infineon HEXFET N-Channel MOSFET, 33 A, 150 V, 3-Pin D2PAK IRFS4615TRLPBF
- RS Stock No.:
- 827-4114
- Mfr. Part No.:
- IRFS4615TRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£4.09
(exc. VAT)
£4.91
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 265 unit(s) shipping from 13 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.818 | £4.09 |
| 50 - 120 | £0.736 | £3.68 |
| 125 - 245 | £0.688 | £3.44 |
| 250 - 495 | £0.646 | £3.23 |
| 500 + | £0.598 | £2.99 |
*price indicative
- RS Stock No.:
- 827-4114
- Mfr. Part No.:
- IRFS4615TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 33 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 42 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 144 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 9.65mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 26 nC @ 10 V | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 42 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 144 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 9.65mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 26 nC @ 10 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin D2PAK IRFS4615TRLPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 150 V, 3-Pin IPAK IRFU4615PBF
- Infineon HEXFET N-Channel MOSFET 150 V D-PAK IRFR4615TRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRF540NSTRRPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRF540NSTRLPBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin D2PAK IRFS52N15DTRLP
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin D2PAK IRFS4115TRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRF540NPBF