Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V Enhancement, 3-Pin TO-263 IRFS4615TRLPBF
- RS Stock No.:
- 827-4114
- Mfr. Part No.:
- IRFS4615TRLPBF
- Brand:
- Infineon
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Subtotal (1 pack of 5 units)*
£4.09
(exc. VAT)
£4.91
(inc. VAT)
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In Stock
- Plus 255 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.818 | £4.09 |
| 50 - 120 | £0.736 | £3.68 |
| 125 - 245 | £0.688 | £3.44 |
| 250 - 495 | £0.646 | £3.23 |
| 500 + | £0.598 | £2.99 |
*price indicative
- RS Stock No.:
- 827-4114
- Mfr. Part No.:
- IRFS4615TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Power Dissipation Pd | 144W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Width | 9.65 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Power Dissipation Pd 144W | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Width 9.65 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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