Infineon HEXFET N-Channel MOSFET, 33 A, 150 V Enhancement TO-252 IRFR4615TRLPBF
- RS Stock No.:
- 257-5867
- Mfr. Part No.:
- IRFR4615TRLPBF
- Brand:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
£10.02
(exc. VAT)
£12.02
(inc. VAT)
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In Stock
- Plus 1,865 unit(s) shipping from 05 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £2.004 | £10.02 |
| 50 - 120 | £1.802 | £9.01 |
| 125 - 245 | £1.686 | £8.43 |
| 250 - 495 | £1.566 | £7.83 |
| 500 + | £1.004 | £5.02 |
*price indicative
- RS Stock No.:
- 257-5867
- Mfr. Part No.:
- IRFR4615TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | PCB | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 144W | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type PCB | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 144W | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface mount package
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