MPN

Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB IRF540NPBF

RS Stock No.:: 914-8154
Mfr. Part No.:: IRF540NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB IRF540NPBF

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Subtotal (1 pack of 20 units)*

£10.88

(exc. VAT)

£13.06

(inc. VAT)

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In Stock

4,420 unit(s) ready to ship
Plus 380 unit(s) ready to ship from another location

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Units	Per unit	Per Pack*
20 - 80	£0.544	£10.88
100 - 180	£0.425	£8.50
200 - 480	£0.397	£7.94
500 - 980	£0.37	£7.40
1000 +	£0.343	£6.86

*price indicative

RS Stock No.:: 914-8154
Mfr. Part No.:: IRF540NPBF
Brand:: Infineon

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRF540NPBF

This MOSFET is designed to provide efficient switching capabilities and power management in various electronic applications. The device operates with a maximum continuous drain current of 33A and a maximum drain-source voltage of 100V. Housed in a TO-220AB package, this component is well-suited for both industrial and commercial uses, ensuring longevity and reliability under a range of environmental conditions.

Features & Benefits

• Utilises advanced processing for low on-resistance
• Supports fast switching speeds for efficient operation
• Fully avalanche rated for enhanced reliability under harsh conditions
• Offers a wide gate threshold voltage range for flexibility
• Designed for through-hole mounting for easy installation

Applications

• Ideal for high current switching in power supplies
• Used in automation and control systems
• Suitable for motor control and driving circuits
• Effective in inverters and converters for renewable energy systems

What is the significance of the low RDS(on) in this device?

A low RDS(on) improves efficiency by reducing power loss during operation, enabling better thermal management and enhancing overall performance in high-current applications.

How does the enhancement mode functionality influence its use?

The enhancement mode allows for low current operation until a specific gate voltage is applied, making it reliable for switching applications where precise control is essential.

What is the importance of the TO-220AB package design?

The TO-220AB package ensures effective heat dissipation, supporting high power dissipation levels while maintaining ease of mounting in various circuit configurations.

How does this MOSFET perform in extreme temperatures?

Operating effectively between -55°C to +175°C, it is designed to maintain performance in demanding environments, ensuring reliability even under challenging conditions.

What type of switching applications is this suitable for?

It is well-suited for powering loads in applications requiring rapid switching, such as motor drive systems, power converters, and various electronic control circuits.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	33 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	44 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	130 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.69mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	71 nC @ 10 V
	Length	10.54mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	8.77mm
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 33 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 44 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 130 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.69mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 71 nC @ 10 V
	Length 10.54mm
	Number of Elements per Chip 1
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 8.77mm
	Forward Diode Voltage 1.2V

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