Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB IRF540NPBF
- RS Stock No.:
- 914-8154
- Mfr. Part No.:
- IRF540NPBF
- Brand:
- Infineon
Subtotal (1 pack of 20 units)*
£10.88
(exc. VAT)
£13.06
(inc. VAT)
FREE delivery for orders over £50.00
- 3,740 unit(s) ready to ship
- Plus 160 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
---|---|---|
20 - 80 | £0.544 | £10.88 |
100 - 180 | £0.425 | £8.50 |
200 - 480 | £0.397 | £7.94 |
500 - 980 | £0.37 | £7.40 |
1000 + | £0.343 | £6.86 |
*price indicative
- RS Stock No.:
- 914-8154
- Mfr. Part No.:
- IRF540NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 33 A | |
Maximum Drain Source Voltage | 100 V | |
Series | HEXFET | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 44 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 130 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 71 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Length | 10.54mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 4.69mm | |
Height | 8.77mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 44 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 71 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.54mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.69mm | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRF540NPBF
Features & Benefits
• Supports fast switching speeds for efficient operation
• Fully avalanche rated for enhanced reliability under harsh conditions
• Offers a wide gate threshold voltage range for flexibility
• Designed for through-hole mounting for easy installation
Applications
• Used in automation and control systems
• Suitable for motor control and driving circuits
• Effective in inverters and converters for renewable energy systems
What is the significance of the low RDS(on) in this device?
How does the enhancement mode functionality influence its use?
What is the importance of the TO-220AB package design?
How does this MOSFET perform in extreme temperatures?
What type of switching applications is this suitable for?
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