MPN

Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-247AC IRFP140NPBF

RS Stock No.:: 919-4902
Mfr. Part No.:: IRFP140NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-247AC IRFP140NPBF

Bulk discount available

Subtotal (1 tube of 25 units)*

£34.50

(exc. VAT)

£41.50

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

775 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
25 - 25	£1.38	£34.50
50 - 100	£1.132	£28.30
125 - 225	£1.062	£26.55
250 - 600	£0.994	£24.85
625 +	£0.911	£22.775

*price indicative

RS Stock No.:: 919-4902
Mfr. Part No.:: IRFP140NPBF
Brand:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP140NPBF

This MOSFET plays a crucial role in improving efficiency and performance across various electronic applications. It is designed to accommodate high currents and voltages, offering dependable power management solutions in automation systems, electronics, and mechanical industries. Its ability to function under extreme conditions ensures versatility in numerous applications.

Features & Benefits

• Maximum continuous drain current of 33A for enhanced load capabilities
• Drain-source voltage rating of up to 100V for effective performance
• Low maximum drain-source resistance of 52 mΩ for efficient operation
• Designed for power dissipation of 140W to manage thermal conditions
• Typical gate charge of 94 nC at 10V for rapid switching speeds

Applications

• Reliable use in switching power supplies
• Motor control for accurate operation
• High current in power conversion systems
• Integration into power amplifiers for improved signal amplification

What is the maximum voltage this component can handle?

It withstands a maximum drain-source voltage of 100V, suitable for high-voltage applications.

How does the gate charge affect the operation?

A typical gate charge of 94 nC at 10V facilitates faster switching, enhancing circuit efficiency.

What are the thermal characteristics of this component?

It operates effectively between -55°C and +175°C, ensuring reliability in different environments.

Can this component be used in automation projects?

Yes, its high continuous current capacity and voltage ratings are ideal for various automation applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	33 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-247AC
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	52 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	140 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	5.3mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	94 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Length	15.9mm
	Number of Elements per Chip	1
	Height	20.3mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 33 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-247AC
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 52 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 140 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 5.3mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 94 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Length 15.9mm
	Number of Elements per Chip 1
	Height 20.3mm
	Minimum Operating Temperature -55 °C

Be the first to know about our latest products and services

Join our mailing list today:

The personal information you provide to us when signing up to the mailing list will be processed in line with our privacy policy.