Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-247AC IRFP140NPBF

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RS Stock No.:
541-1269
Distrelec Article No.:
303-41-344
Mfr. Part No.:
IRFP140NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247AC

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

5.3mm

Typical Gate Charge @ Vgs

94 nC @ 10 V

Length

15.9mm

Number of Elements per Chip

1

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Height

20.3mm

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP140NPBF


This MOSFET plays a crucial role in improving efficiency and performance across various electronic applications. It is designed to accommodate high currents and voltages, offering dependable power management solutions in automation systems, electronics, and mechanical industries. Its ability to function under extreme conditions ensures versatility in numerous applications.

Features & Benefits


• Maximum continuous drain current of 33A for enhanced load capabilities
• Drain-source voltage rating of up to 100V for effective performance
• Low maximum drain-source resistance of 52 mΩ for efficient operation
• Designed for power dissipation of 140W to manage thermal conditions
• Typical gate charge of 94 nC at 10V for rapid switching speeds

Applications


• Reliable use in switching power supplies
• Motor control for accurate operation
• High current in power conversion systems
• Integration into power amplifiers for improved signal amplification

What is the maximum voltage this component can handle?


It withstands a maximum drain-source voltage of 100V, suitable for high-voltage applications.

How does the gate charge affect the operation?


A typical gate charge of 94 nC at 10V facilitates faster switching, enhancing circuit efficiency.

What are the thermal characteristics of this component?


It operates effectively between -55°C and +175°C, ensuring reliability in different environments.

Can this component be used in automation projects?


Yes, its high continuous current capacity and voltage ratings are ideal for various automation applications.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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