Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-247AC IRFP140NPBF
- RS Stock No.:
- 541-1269
- Distrelec Article No.:
- 303-41-344
- Mfr. Part No.:
- IRFP140NPBF
- Brand:
- Infineon
Subtotal (1 unit)*
£1.66
(exc. VAT)
£1.99
(inc. VAT)
FREE delivery for orders over £50.00
- 722 unit(s) ready to ship
- Plus 99 unit(s) ready to ship from another location
- Plus 795 unit(s) shipping from 09 October 2025
Units | Per unit |
---|---|
1 - 9 | £1.66 |
10 - 49 | £1.43 |
50 - 99 | £1.34 |
100 - 249 | £1.25 |
250 + | £1.15 |
*price indicative
- RS Stock No.:
- 541-1269
- Distrelec Article No.:
- 303-41-344
- Mfr. Part No.:
- IRFP140NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 33 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-247AC | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 52 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 140 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Width | 5.3mm | |
Typical Gate Charge @ Vgs | 94 nC @ 10 V | |
Length | 15.9mm | |
Number of Elements per Chip | 1 | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -55 °C | |
Height | 20.3mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 52 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 5.3mm | ||
Typical Gate Charge @ Vgs 94 nC @ 10 V | ||
Length 15.9mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 20.3mm | ||
N-Channel Power MOSFET 100V, Infineon
Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP140NPBF
Features & Benefits
• Drain-source voltage rating of up to 100V for effective performance
• Low maximum drain-source resistance of 52 mΩ for efficient operation
• Designed for power dissipation of 140W to manage thermal conditions
• Typical gate charge of 94 nC at 10V for rapid switching speeds
Applications
• Motor control for accurate operation
• High current in power conversion systems
• Integration into power amplifiers for improved signal amplification
What is the maximum voltage this component can handle?
How does the gate charge affect the operation?
What are the thermal characteristics of this component?
Can this component be used in automation projects?
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