Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF
- RS Stock No.:
- 165-8115
- Mfr. Part No.:
- IRF540NLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£57.50
(exc. VAT)
£69.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 900 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.15 | £57.50 |
| 100 - 200 | £0.92 | £46.00 |
| 250 - 450 | £0.863 | £43.15 |
| 500 - 950 | £0.805 | £40.25 |
| 1000 + | £0.748 | £37.40 |
*price indicative
- RS Stock No.:
- 165-8115
- Mfr. Part No.:
- IRF540NLPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 33 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | I2PAK (TO-262) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 44 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 130 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 71 nC @ 10 V | |
| Width | 4.83mm | |
| Height | 9.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type I2PAK (TO-262) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 44 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 71 nC @ 10 V | ||
Width 4.83mm | ||
Height 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
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