Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF
- RS Stock No.:
- 165-8115
- Mfr. Part No.:
- IRF540NLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£60.20
(exc. VAT)
£72.25
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 900 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.204 | £60.20 |
| 100 - 200 | £0.963 | £48.15 |
| 250 - 450 | £0.903 | £45.15 |
| 500 - 950 | £0.843 | £42.15 |
| 1000 + | £0.783 | £39.15 |
*price indicative
- RS Stock No.:
- 165-8115
- Mfr. Part No.:
- IRF540NLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 33 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | I2PAK (TO-262) | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 44 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 130 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 71 nC @ 10 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 9.65mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type I2PAK (TO-262) | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 44 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 71 nC @ 10 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 9.65mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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