Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK IRF540NSTRRPBF
- RS Stock No.:
- 165-5896
- Mfr. Part No.:
- IRF540NSTRRPBF
- Brand:
- Infineon
Subtotal (1 reel of 800 units)*
£744.00
(exc. VAT)
£896.00
(inc. VAT)
FREE delivery for orders over £50.00
- 2,400 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
800 - 800 | £0.93 | £744.00 |
1600 - 1600 | £0.884 | £707.20 |
2400 + | £0.828 | £662.40 |
*price indicative
- RS Stock No.:
- 165-5896
- Mfr. Part No.:
- IRF540NSTRRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 33 A | |
Maximum Drain Source Voltage | 100 V | |
Series | HEXFET | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 44 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 130 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Length | 10.67mm | |
Width | 9.65mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 71 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 44 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 10.67mm | ||
Width 9.65mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 71 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 100V, Infineon
Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRRPBF
Features & Benefits
• Continuous drain current capability of 33A supports various applications
• Wide gate-source voltage range provides design flexibility
• Withstands high temperatures up to 175°C
• Fast switching improves overall circuit efficiency
• D2PAK surface mount design facilitates PCB integration
Applications
• Commonly implemented in DC-DC converters for energy efficiency
• Suitable for motor drive that require high current
• Found in power supply modules for industrial electronics
• Appropriate for automotive due to robust thermal performance
What is the significance of low RDS(on) in operation?
How does the MOSFET perform at higher temperatures?
Can this device handle pulsed currents, and what are the specifications?
What are the implications of the specified gate threshold voltage?
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