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Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK IRF540NSTRRPBF

RS Stock No.:: 165-5896
Mfr. Part No.:: IRF540NSTRRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK IRF540NSTRRPBF

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Subtotal (1 reel of 800 units)*

£744.00

(exc. VAT)

£896.00

(inc. VAT)

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In Stock

2,400 unit(s) ready to ship
Plus 999,996,800 unit(s) shipping from 10 June 2026

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Units	Per unit	Per Reel*
800 - 800	£0.93	£744.00
1600 - 1600	£0.884	£707.20
2400 +	£0.828	£662.40

*price indicative

RS Stock No.:: 165-5896
Mfr. Part No.:: IRF540NSTRRPBF
Brand:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRRPBF

This N-channel power MOSFET is specifically designed for high-efficiency applications, delivering significant performance in various electronic systems. It excels in high-current environments, where reliability and low resistance are essential. Its enhancements make it particularly useful in industries focused on automation and power management.

Features & Benefits

• Low RDS(on) minimises power losses during operation
• Continuous drain current capability of 33A supports various applications
• Wide gate-source voltage range provides design flexibility
• Withstands high temperatures up to 175°C
• Fast switching improves overall circuit efficiency
• D2PAK surface mount design facilitates PCB integration

Applications

• Used in power management circuits for automation
• Commonly implemented in DC-DC converters for energy efficiency
• Suitable for motor drive that require high current
• Found in power supply modules for industrial electronics
• Appropriate for automotive due to robust thermal performance

What is the significance of low RDS(on) in operation?

Low RDS(on) reduces heat generation and enhances energy efficiency, which is crucial for extending component life and lowering operating expenses.

How does the MOSFET perform at higher temperatures?

It operates reliably up to 175°C, ensuring stability in extreme conditions while meeting performance demands without failure.

Can this device handle pulsed currents, and what are the specifications?

It supports pulsed drain currents up to 110A, effectively managing short bursts of high power, making it ideal for applications with fluctuating load conditions.

What are the implications of the specified gate threshold voltage?

The gate threshold voltage range of 2V to 4V indicates the voltage needed to start conduction, providing essential information for design integration in control circuits.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	33 A
	Maximum Drain Source Voltage	100 V
	Package Type	D2PAK (TO-263)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	44 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	130 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	9.65mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	71 nC @ 10 V
	Length	10.67mm
	Maximum Operating Temperature	+175 °C
	Height	4.83mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 33 A
	Maximum Drain Source Voltage 100 V
	Package Type D2PAK (TO-263)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 44 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 130 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 9.65mm
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 71 nC @ 10 V
	Length 10.67mm
	Maximum Operating Temperature +175 °C
	Height 4.83mm
	Minimum Operating Temperature -55 °C

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