Infineon HEXFET N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK IRF8010STRLPBF

Subtotal (1 reel of 800 units)*

£677.60

(exc. VAT)

£812.80

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 18 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
800 +£0.847£677.60

*price indicative

RS Stock No.:
168-5978
Mfr. Part No.:
IRF8010STRLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

260 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

81 nC @ 10 V

Width

9.65mm

Length

10.67mm

Forward Diode Voltage

1.3V

Height

4.83mm

Minimum Operating Temperature

-55 °C

Related links