Infineon HEXFET N-Channel MOSFET, 246 A, 75 V, 3-Pin D2PAK IRFS7730TRLPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

246 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

271 nC @ 10 V

Number of Elements per Chip

1

Length

10.67mm

Width

9.65mm

Minimum Operating Temperature

-55 °C

Height

4.83mm

Forward Diode Voltage

1.2V