Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF
- RS Stock No.:
- 541-0452
- Mfr. Part No.:
- IRF640PBF
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
£52.90
(exc. VAT)
£63.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 50 unit(s) ready to ship
- Plus 350 unit(s) ready to ship from another location
- Plus 2,000 unit(s) shipping from 08 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.058 | £52.90 |
| 100 - 200 | £0.91 | £45.50 |
| 250 + | £0.846 | £42.30 |
*price indicative
Alternative
This product is not currently available. Here is our alternative recommendation.
Each
£0.66
(exc. VAT)
£0.79
(inc. VAT)
- RS Stock No.:
- 541-0452
- Mfr. Part No.:
- IRF640PBF
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 180 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V | |
| Width | 4.7mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 10.41mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.01mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 70 nC @ 10 V | ||
Width 4.7mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.41mm | ||
Minimum Operating Temperature -55 °C | ||
Height 9.01mm | ||
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