Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK SIHF640L-GE3
- RS Stock No.:
- 165-6089
- Mfr. Part No.:
- SIHF640L-GE3
- Brand:
- Vishay
Subtotal (1 tube of 50 units)*
£43.35
(exc. VAT)
£52.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 12 January 2026
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.867 | £43.35 |
100 - 200 | £0.815 | £40.75 |
250 - 450 | £0.737 | £36.85 |
500 + | £0.694 | £34.70 |
*price indicative
- RS Stock No.:
- 165-6089
- Mfr. Part No.:
- SIHF640L-GE3
- Brand:
- Vishay
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 18 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | I2PAK (TO-262) | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 180 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 130 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 70 nC @ 10 V | |
Transistor Material | Si | |
Width | 4.83mm | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Minimum Operating Temperature | -55 °C | |
Height | 11.3mm | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type I2PAK (TO-262) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 70 nC @ 10 V | ||
Transistor Material Si | ||
Width 4.83mm | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 11.3mm | ||
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