Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK SIHF640L-GE3

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Subtotal (1 tube of 50 units)*

£44.10

(exc. VAT)

£52.90

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50£0.882£44.10
100 - 200£0.829£41.45
250 - 450£0.75£37.50
500 +£0.706£35.30

*price indicative

RS Stock No.:
165-6089
Mfr. Part No.:
SIHF640L-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

70 nC @ 10 V

Width

4.83mm

Number of Elements per Chip

1

Length

10.67mm

Height

11.3mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

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