Infineon OptiMOS™ 3 N-Channel MOSFET, 80 A, 100 V, 3-Pin I2PAK IPI086N10N3GXKSA1

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RS Stock No.:
892-2166
Mfr. Part No.:
IPI086N10N3GXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 3

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.36mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

42 nC @ 10 V

Width

4.572mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

11.177mm

Forward Diode Voltage

1.2V

Infineon OptiMOS™3 Power MOSFETs, 100V and over


Infineon OptiMOS™ 3 Series MOSFET, 80A Maximum Continuous Drain Current, 125W Maximum Power Dissipation - IPI086N10N3GXKSA1


This MOSFET is designed for high-efficiency power management applications and is suitable for various sectors, including automation and electronics. With a continuous drain current of 80A and a maximum drain-source voltage of 100V, it offers a dependable and efficient solution for electronic systems.

Features & Benefits


• N-channel design optimises electrical performance
• Low RDS(on) reduces power losses
• High power dissipation capability accommodates intensive applications
• Enhanced gate threshold improves switching efficiency
• Through hole mounting allows easy integration into circuits

Applications


• Used for high-frequency switching in power supplies
• Facilitates synchronous rectification in converter circuits
• Suitable for industrial automation systems requiring efficient power control
• Applied in various electronic devices for enhanced energy efficiency
• Appropriate for automotive requiring consistent performance

What is the significance of the low RDS(on) in this device?


The low RDS(on) value minimises energy losses during switching, increasing overall system performance.

How does the MOSFET handle high temperatures?


It is designed to function at temperatures up to 175°C, ensuring consistent performance even in challenging environmental conditions.

What mounting type does this component require?


It features a through hole mounting design that facilitates straightforward integration into existing PCB layouts.

Is it suitable for use in synchronous rectification?


Yes, it is specifically designed for efficient synchronous rectification in power electronics, promoting overall energy savings.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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