Infineon OptiMOS™ 3 N-Channel MOSFET, 80 A, 100 V, 3-Pin I2PAK IPI086N10N3GXKSA1

RS Stock No.:: 892-2166
Mfr. Part No.:: IPI086N10N3GXKSA1
Brand:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 80 A, 100 V, 3-Pin I2PAK IPI086N10N3GXKSA1

Subtotal (1 pack of 5 units)*

£6.68

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£8.015

(inc. VAT)

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Units	Per unit	Per Pack*
5 +	£1.336	£6.68

*price indicative

RS Stock No.:: 892-2166
Mfr. Part No.:: IPI086N10N3GXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	100 V
	Package Type	I2PAK (TO-262)
	Series	OptiMOS™ 3
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	15.4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	125 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.572mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Length	10.36mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	42 nC @ 10 V
	Height	11.177mm
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 100 V
	Package Type I2PAK (TO-262)
	Series OptiMOS™ 3
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 15.4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 125 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.572mm
	Transistor Material Si
	Number of Elements per Chip 1
	Length 10.36mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 42 nC @ 10 V
	Height 11.177mm
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C

Infineon OptiMOS™3 Power MOSFETs, 100V and over

Infineon OptiMOS™ 3 Series MOSFET, 80A Maximum Continuous Drain Current, 125W Maximum Power Dissipation - IPI086N10N3GXKSA1

This MOSFET is designed for high-efficiency power management applications and is suitable for various sectors, including automation and electronics. With a continuous drain current of 80A and a maximum drain-source voltage of 100V, it offers a dependable and efficient solution for electronic systems.

Features & Benefits

• N-channel design optimises electrical performance
• Low RDS(on) reduces power losses
• High power dissipation capability accommodates intensive applications
• Enhanced gate threshold improves switching efficiency
• Through hole mounting allows easy integration into circuits

Applications

• Used for high-frequency switching in power supplies
• Facilitates synchronous rectification in converter circuits
• Suitable for industrial automation systems requiring efficient power control
• Applied in various electronic devices for enhanced energy efficiency
• Appropriate for automotive requiring consistent performance

What is the significance of the low RDS(on) in this device?

The low RDS(on) value minimises energy losses during switching, increasing overall system performance.

How does the MOSFET handle high temperatures?

It is designed to function at temperatures up to 175°C, ensuring consistent performance even in challenging environmental conditions.

What mounting type does this component require?

It features a through hole mounting design that facilitates straightforward integration into existing PCB layouts.

Is it suitable for use in synchronous rectification?

Yes, it is specifically designed for efficient synchronous rectification in power electronics, promoting overall energy savings.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.