Infineon OptiMOS™ 3 N-Channel MOSFET, 80 A, 100 V, 3-Pin I2PAK IPI086N10N3GXKSA1
- RS Stock No.:
- 892-2166
- Mfr. Part No.:
- IPI086N10N3GXKSA1
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£6.68
(exc. VAT)
£8.015
(inc. VAT)
FREE delivery for orders over £50.00
- 1,340 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 + | £1.336 | £6.68 |
*price indicative
- RS Stock No.:
- 892-2166
- Mfr. Part No.:
- IPI086N10N3GXKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 80 A | |
Maximum Drain Source Voltage | 100 V | |
Series | OptiMOS™ 3 | |
Package Type | I2PAK (TO-262) | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 15.4 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 125 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Length | 10.36mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 42 nC @ 10 V | |
Width | 4.572mm | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 11.177mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ 3 | ||
Package Type I2PAK (TO-262) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 15.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 10.36mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 42 nC @ 10 V | ||
Width 4.572mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 11.177mm | ||
Forward Diode Voltage 1.2V | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
Infineon OptiMOS™ 3 Series MOSFET, 80A Maximum Continuous Drain Current, 125W Maximum Power Dissipation - IPI086N10N3GXKSA1
Features & Benefits
• Low RDS(on) reduces power losses
• High power dissipation capability accommodates intensive applications
• Enhanced gate threshold improves switching efficiency
• Through hole mounting allows easy integration into circuits
Applications
• Facilitates synchronous rectification in converter circuits
• Suitable for industrial automation systems requiring efficient power control
• Applied in various electronic devices for enhanced energy efficiency
• Appropriate for automotive requiring consistent performance
What is the significance of the low RDS(on) in this device?
How does the MOSFET handle high temperatures?
What mounting type does this component require?
Is it suitable for use in synchronous rectification?
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