Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 80 A, 100 V, 3-Pin D2PAK IPB065N10N3GATMA1
- RS Stock No.:
- 220-7383
- Mfr. Part No.:
- IPB065N10N3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£11.17
(exc. VAT)
£13.405
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 865 unit(s) ready to ship
- Plus 999,999,130 unit(s) shipping from 08 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £2.234 | £11.17 |
| 10 - 95 | £2.044 | £10.22 |
| 100 - 245 | £1.89 | £9.45 |
| 250 - 495 | £1.752 | £8.76 |
| 500 + | £1.706 | £8.53 |
*price indicative
- RS Stock No.:
- 220-7383
- Mfr. Part No.:
- IPB065N10N3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | OptiMOS™ 3 | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.0065 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ 3 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0065 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and figure of merit.
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
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