MPN

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 80 A, 100 V Enhancement, 3-Pin TO-263 IPB065N10N3GATMA1

RS Stock No.:: 220-7383
Mfr. Part No.:: IPB065N10N3GATMA1
Brand:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 80 A, 100 V Enhancement, 3-Pin TO-263 IPB065N10N3GATMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

£11.17

(exc. VAT)

£13.405

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 865 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 5	£2.234	£11.17
10 - 95	£2.044	£10.22
100 - 245	£1.89	£9.45
250 - 495	£1.752	£8.76
500 +	£1.706	£8.53

*price indicative

RS Stock No.:: 220-7383
Mfr. Part No.:: IPB065N10N3GATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	OptiMOS 3
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6.5mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series OptiMOS 3
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6.5mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB065N10N3GATMA1

The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and figure of merit.

Excellent switching performance

World’s lowest R DS(on)

Very low Q g and Q gd

Excellent gate charge x R DS(on) product (FOM)

Environmentally friendly

Increased efficiency

Highest power density

Less paralleling required

Smallest board-space consumption

Easy-to-design products