Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 120 A, 80 V, 3-Pin D2PAK IPB031N08N5ATMA1
- RS Stock No.:
- 220-7377
- Mfr. Part No.:
- IPB031N08N5ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£1,140.00
(exc. VAT)
£1,370.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £1.14 | £1,140.00 |
*price indicative
- RS Stock No.:
- 220-7377
- Mfr. Part No.:
- IPB031N08N5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | D2PAK (TO-263) | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.0031 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type D2PAK (TO-263) | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0031 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOS 5 80V industrial power MOSFET IPB031N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
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