Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 120 A, 80 V Enhancement, 3-Pin TO-263

RS Stock No.:: 220-7377
Mfr. Part No.:: IPB031N08N5ATMA1
Brand:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 120 A, 80 V Enhancement, 3-Pin TO-263

Subtotal (1 reel of 1000 units)*

£939.00

(exc. VAT)

£1,127.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

1,000 unit(s) ready to ship

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Units	Per unit	Per Reel*
1000 +	£0.939	£939.00

*price indicative

RS Stock No.:: 220-7377
Mfr. Part No.:: IPB031N08N5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	80V
	Package Type	TO-263
	Series	OptiMOS 3
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.1mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 80V
	Package Type TO-263
	Series OptiMOS 3
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.1mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB031N08N5ATMA1

The Infineon OptiMOS 5 80V industrial power MOSFET IPB031N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

Optimized for synchronous rectification

Ideal for high switching frequency

Output capacitance reduction of up to 44%

R DS(on) reduction of up to 44%

Highest system efficiency

Reduced switching and conduction losses

Less paralleling required

Increased power density

Low voltage overshoot